MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 23

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 16:
Figure 17:
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
t
IOL vs. Rp (V
Fall and
Notes:
t
Rise (V
1.
2.
3.
4. See TC values in Figure 19 on page 24 for TC and approximate Rp value.
I(mA)
CC
V
t
t
t
Fall and
Rise is primarily dependent on external pull-up resistor and external capacitive loading.
Fall ≈ 7ns at 1.8V.
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
Q = 3.3V)
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
CC
-1
Q = 1.8V)
0
t
Rise are calculated at 10 percent and 90 percent points.
Micron Confidential and Proprietary
0
2000
t Fall
8Gb Asychronous/Synchronous NAND Flash Memory
2
4000
4
23
6000
TC
Rp
0
t Rise
8000
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2
IOL at 3.60V (max)
10000
4
12000
VccQ 1.8V
6
©2008 Micron Technology, Inc. All rights reserved.
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