MT29F8G08ABABAWP:B Micron Technology Inc, MT29F8G08ABABAWP:B Datasheet - Page 80

• Manufacturer Part Number: MT29F8G08ABABAWP:B
• Manufacturer: Micron Technology Inc

Specifications of MT29F8G08ABABAWP:B

• Lead Free Status / RoHS Status: Supplier Unconfirmed

Figure 54:
Figure 55:
COPYBACK READ MULTI-PLANE (00h-32h)
COPYBACK PROGRAM MULTI-PLANE (85h-11h)
PDF: 09005aef8386131b / Source: 09005aef838cad98
m61a_async_sync_nand.fm - Rev. A 2/09 EN
Cycle type
(DQ[7:0])
I/O[7:0]
Cycle type
Cycle type
(DQ[7:0])
(DQ[7:0])
COPYBACK PROGRAM (85h–10h) Operation
COPYBACK PROGRAM (85h–10h) with CHANGE WRITE COLUMN (85h) Operation
I/O[7:0]
I/O[7:0]
RDY
RDY
RDY
Command
1
Command
Command
85h
85h
The COPYBACK READ MULTI-PLANE (00h-32h) command is functionally identical to
the READ PAGE MULTI-PLANE (00h-32h) command, except that the 35h command is
written as the final command. The complete command sequence for the COPYBACK
READ PAGE MUTLI-PLANE is 00h-32h-00h-35h. See "READ PAGE MULTI-PLANE (00h-
32h)" on page 66 for further details.
The COPYBACK PROGRAM MULTI-PLANE (85h-11h) command is functionally identical
to the PROGRAM PAGE MULTI-PLANE (85h-11h) command, except that when 85h is
written to the command register, cache register contents are not cleared. See
"PROGRAM PAGE MULTI-PLANE 80h-11h" on page 63 for further details.
85h
Address
Address
C1
Address
C1
C1
Address
Micron Confidential and Proprietary
Address
C2
Address
C2
C2
8Gb Asychronous/Synchronous NAND Flash Memory
Address
Address
R1
t CCS
R1
Address
80
Address
R2
R2
D
Dj
IN
Address
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Dj + 1
Address
R3
D
R3
IN
Command
Dj + 2
D
10h
IN
t ADL
t WB
Command
10h
t WB
D
t PROG
Di
IN
Command Definitions
©2008 Micron Technology, Inc. All rights reserved.
Di + 1
D
IN
t PROG
1
Advance