MT45W1MW16BDGB-701 IT Micron Technology Inc, MT45W1MW16BDGB-701 IT Datasheet - Page 12

• Manufacturer Part Number: MT45W1MW16BDGB-701 IT
• Manufacturer: Micron Technology Inc

Specifications of MT45W1MW16BDGB-701 IT

• Operating Temperature (max): 85C
• Operating Temperature (min): -40C
• Mounting: Surface Mount
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Compliant

Figure 7:
Burst Mode Operation
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Page Mode READ Operation (ADV = LOW)
The CE# LOW time is limited by refresh considerations. CE# must not stay LOW longer
than
ADDRESS
Burst mode operations enable high-speed synchronous READ and WRITE operations.
Burst operations consist of a multi-clock sequence that must be performed in an
ordered fashion. After CE# goes LOW, the address to access is latched on the next rising
edge of CLK that ADV# is LOW. During this first clock rising edge, WE# indicates whether
the operation is going to be a READ (WE# = HIGH, Figure 8 on page 13) or WRITE (WE#
= LOW, Figure 9 on page 14).
The size of a burst can be specified in the BCR as either fixed-length or continuous.
Fixed-length bursts consist of four, eight, or sixteen words. Continuous bursts have the
ability to start at a specified address and burst through the entire memory. The latency
count stored in the BCR defines the number of clock cycles that elapse before the initial
data value is transferred between the processor and CellularRAM device.
The WAIT output will be asserted as soon as CE# goes LOW and will be de-asserted to
indicate when data is to be transferred into (or out of ) the memory. WAIT will again be
asserted if the burst crosses the boundary between 128-word rows. Once the Cellu-
larRAM device has restored the previous row’s data and accessed the next row, WAIT will
be de-asserted and the burst can continue (see Figure 33 on page 43).
The processor can access other devices without incurring the timing penalty of the
initial latency for a new burst by suspending burst mode. Bursts are suspended by stop-
ping CLK. CLK can be stopped HIGH or LOW. If another device will use the data bus
while the burst is suspended, OE# should be taken HIGH to disable the CellularRAM
outputs; otherwise, OE# can remain LOW. Note that the WAIT output will continue to be
active, and as a result no other devices should directly share the WAIT connection to the
controller. To continue the burst sequence, OE# is taken LOW, then CLK is restarted after
valid data is available on the bus.
LB#/UB#
DATA
WE#
OE#
CE#
t
CEM.
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
ADDRESS[0]
t AA
12
D[0]
ADDRESS
t APA
[1]
< t CEM
Micron Technology, Inc., reserves the right to change products or specifications without notice.
D[1]
ADDRESS
t APA
[2]
D[2]
ADDRESS
t APA
[3]
D[3]
DON’T CARE
Bus Operating Modes
©2005 Micron Technology, Inc. All rights reserved.