MT45W1MW16BDGB-708 AT Micron Technology Inc, MT45W1MW16BDGB-708 AT Datasheet - Page 30

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MT45W1MW16BDGB-708 AT

Manufacturer Part Number
MT45W1MW16BDGB-708 AT
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W1MW16BDGB-708 AT

Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
Table 8:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Description
Supply voltage
I/O supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Output leakage current
Operating Current
Asynchronous random READ/
WRITE
Asynchronous page READ
Initial access, burst READ/WRITE
Continuous burst READ
Continuous burst WRITE
Standby current
Electrical Characteristics and Operating Conditions
Wireless temperature
Notes:
1. –30°C and 3.6V I/O exceed the CellularRAM Workgroup 1.0 specifications.
2. Input signals may overshoot to V
3. V
4. Input signals may undershoot to V
5. BCR[5] = 0b.
6. This parameter is specified with the outputs disabled to avoid external loading effects. The
7. I
user must add the current required to drive output capacitance expected in the actual sys-
tem.
achieve low standby current, all inputs must be driven to either V
slightly higher for up to 500ms after power-up, after changes to the PAR array partition, or
when entering standby mode.
SB
IH
V
V
(MAX) values measured with PAR set to FULL ARRAY and TCR set to +85°C. In order to
V
(MIN) value is not aligned with CellularRAM work group 1.0 specification of V
1
IN
IN
Chip enabled,
Chip disabled
I
I
IN
OE# = V
Conditions
(–30ºC < T
OH
OL
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
CE# = V
= V
= V
= 0 to V
I
OUT
= +0.2mA
= –0.2mA
CC
CC
Q or 0V
Q or 0V
= 0
IH
CC
CC
C
or
Q
< +85ºC); Industrial temperature (–40ºC < T
Q
I
V
I
I
CC
V
I
CC
I
CC
V
V
V
V
I
CC
CC
I
CC
I
LO
OH
SB
OL
CC
LI
3W
IH
IL
1P
3R
1
2
Q
30
Symbol
CC
SS
Q + 1.0V for periods less than 2ns during transitions.
Standard
104 MHz
104 MHz
104 MHz
80 MHz
80 MHz
80 MHz
- 1.0V for periods less than 2ns during transitions.
–70
–70
Micron Technology, Inc., reserves the right to change products or specifications without notice.
0.8 V
Min
–0.2
1.7
1.7
1.4
CC
Electrical Characteristics
Q
C
< +85ºC)
V
0.2 V
©2005 Micron Technology, Inc. All rights reserved.
CC
Max
CC
1.95
Q + 0.2
0.4
3.6
20
15
35
30
28
22
33
25
70
1
1
Q or V
CC
Q
SS
. I
Units
mA
mA
mA
mA
mA
µA
µA
µA
SB
V
V
V
V
V
V
might be
CC
Q - 0.4V.
Notes
2, 3
1
4
5
5
6
6
6
6
6
7

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