MT45W1MW16BDGB-708 AT Micron Technology Inc, MT45W1MW16BDGB-708 AT Datasheet - Page 33

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MT45W1MW16BDGB-708 AT

Manufacturer Part Number
MT45W1MW16BDGB-708 AT
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT45W1MW16BDGB-708 AT

Mounting
Surface Mount
Lead Free Status / RoHS Status
Compliant
Timing Requirements
Table 12:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
Parameter
Address access time
ADV# access time
Page access time
Address hold from ADV# HIGH
Address setup to ADV# HIGH
LB#/UB# access time
LB#/UB# disable to DQ High-Z output
LB#/UB# enable to Low-Z output
Maximum CE# pulse width
CE# LOW to WAIT valid
Chip select access time
CE# LOW to ADV# HIGH
Chip disable to DQ and WAIT High-Z output
Chip enable to Low-Z output
Output enable to valid output
Output hold from address change
Output disable to DQ High-Z output
Output enable to Low-Z output
Page cycle time
READ cycle time
ADV# pulse width LOW
ADV# pulse width HIGH
1
Asynchronous READ Cycle Timing Requirements
Notes:
1. All tests are performed with the outputs configured for full drive strength (BCR[5] = 0b).
2. Low-Z to High-Z timings are tested with the circuit shown in Figure 25 on page 32. The
3. High-Z to Low-Z timings are tested with the circuit shown in Figure 25 on page 32. The Low-
4. Page mode enabled only.
High-Z timings measure a 100mV transition from either V
Z timings measure a 100mV transition away from the High-Z (V
V
OH
or V
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
OL
.
33
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Symbol
t
AADV
t
t
t
t
t
t
t
t
t
t
t
t
AVH
CEM
CEW
t
OHZ
APA
t
t
t
VPH
AVS
BHZ
t
OLZ
t
t
BLZ
CVS
t
t
AA
OH
BA
CO
HZ
OE
PC
RC
VP
LZ
Min
10
10
10
10
20
70
10
10
5
1
5
3
OH
70ns
or V
Timing Requirements
CC
©2005 Micron Technology, Inc. All rights reserved.
Max
OL
7.5
Q/2) level toward either
70
70
20
70
70
20
8
8
8
8
toward V
Units
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CC
Q/2.
Notes
4
3
2
4
3
4
3

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