MT45W1MW16BDGB-708 IT TR Micron Technology Inc, MT45W1MW16BDGB-708 IT TR Datasheet - Page 54
MT45W1MW16BDGB-708 IT TR
Manufacturer Part Number
MT45W1MW16BDGB-708 IT TR
Description
Manufacturer
Micron Technology Inc
Datasheet
1.MT45W1MW16BDGB-708_IT_TR.pdf
(59 pages)
Specifications of MT45W1MW16BDGB-708 IT TR
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Mounting
Surface Mount
Operating Temperature Classification
Industrial
Lead Free Status / RoHS Status
Compliant
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Figure 44:
PDF: 09005aef81cb58ed/Source: 09005aef81c7a667
16mb_burst_cr1_0_p23z_2.fm - Rev. H 4/08 EN
DQ[15:0]
LB#/UB#
A[19:0]
ADV#
WAIT
WE#
OE#
CLK
CE#
Burst READ Followed by Asynchronous WRITE Using ADV#
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
IH
IL
OH
OL
OH
OL
Notes:
READ Burst Identified
1. When configured for synchronous mode (BCR[15] = 0), a refresh opportunity must be pro-
ADDRESS
t
t
SP
CSP
t
VALID
(WE# = HIGH)
t
SP
t
SP
t
SP
CEW
vided every
tions: a) clocked CE# HIGH, or b) CE# HIGH for greater than 15ns. Note that CellularRAM
Workgroup specification 1.0 requires CE# to be clocked HIGH to terminate the burst.
t
HD
t
t
HD
HD
t
HD
High-Z
16Mb: 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
t
t
CEM. A refresh opportunity is satisfied by either of the following two condi-
ABA
t
OLZ
t
BOE
t
ACLK
t
VPH
t
KHTL
t
CLK
OUTPUT
54
t
VALID
HD
t
KOH
t
t
OHZ
HZ
t
CBPH
Micron Technology, Inc., reserves the right to change products or specifications without notice.
High-Z
1
t
CEW
t
AS
t
AS
t
VP
t
ADDRESS
AVS
VALID
t
AVH
t
t
CW
BW
t
AW
t
WP
DON’T CARE
t
VS
©2005 Micron Technology, Inc. All rights reserved.
t
VALID
INPUT
DW
Timing Diagrams
t
HZ
UNDEFINED
t
WPH
t
DH
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