M368L6423FTNCB3 Samsung Semiconductor, M368L6423FTNCB3 Datasheet

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M368L6423FTNCB3

Manufacturer Part Number
M368L6423FTNCB3
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of M368L6423FTNCB3

Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
700ps
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.72A
Number Of Elements
16
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Not Compliant
128MB, 256MB, 512MB Unbuffered DIMM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL
INFORMATION IN THIS DOCUMENT IS PROVIDED
ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
184pin Unbuffered Module based on 256Mb F-die
DDR SDRAM Unbuffered Module
* Samsung Electronics reserves the right to change products or specification without notice.
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
with 64/72-bit Non ECC/ECC
66 TSOP-II
Rev. 1.3 July 2005
DDR SDRAM

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M368L6423FTNCB3 Summary of contents

Page 1

... Unbuffered DIMM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non ECC/ECC INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY ...

Page 2

... Absolute Maximum Ratings...................................................................................................... 11 8.0 DC Operating Conditions.......................................................................................................... 11 9.0 DDR SDRAM IDD spec table ..................................................................................................... 12 9.1 M368L1624FT(U) [ (16M x 16 128MB Non ECC Module ] 9.2 M368L3223FT(U) [ (32M 256MB Non ECC Module ] 9.3 M381L3223FT(U) [ (32M 256MB ECC Module ] 9.4 M368L6423FT(U) [ (32M 16, 512MB Non ECC Module ] 9 ...

Page 3

... Unbuffered DIMM Revision History Revision Month Year 1.0 August 2003 1.1 August 2003 1.2 May 2004 1.3 July 2005 - First release - Added K4H560838F based Module. - Modified IDD current spec. - Changed master format. DDR SDRAM History Rev. 1.3 July 2005 ...

Page 4

Unbuffered DIMM 184Pin Unbuffered DIMM based on 256Mb F-die (x8, x16) 1.0 Ordering Information Part Number M368L1624FT(U)M-C(L)CC/B3 M368L3223FT(U)N-C(L)CC/B3 M381L3223FT(U)M-C(L)CC/B3 M368L6423FT(U)N-C(L)CC/B3 M381L6423FT(U)M-C(L)CC/B3 Note : Leaded and Lead-free(Pb-free) can be discriminated by PKG P TSOP with ...

Page 5

... Note : These pins are not used in this module. 2. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are used on x72 module ( M381~ ), and are not used on x64 module. 3. Pins 111, 158 are NC for 1row modules & used for 2row modules. 4. Pins 137, 138 are NC for x16 1Row module. ...

Page 6

... Unbuffered DIMM 6.0 Functional Block Diagram 6.0 Functional Block Diagram 6.1 128MB, 16M x 64 Non ECC Module (M368L1624FT(U)) (Populated as 1 bank of x16 DDR SDRAM Module) CS0 LDQS DQS1 CS LDM DM1 DQ13 I/O 0 DQ14 I DQ12 I/O 2 DQ15 I/O 3 DQ9 ...

Page 7

... Unbuffered DIMM 6.2 256MB, 32M x 64 Non ECC Module (M368L3223FT(U)) (Populated as 1 bank of x8 DDR SDRAM Module) CS0 DQS0 DQS4 DM0 DM4 DM/ CS DQS DQ0 I/O 6 DQ1 D0 I/O 4 DQ2 I/O 2 DQ3 I/O 0 DQ4 I/O 7 DQ5 I/O 5 DQ6 I/O 3 ...

Page 8

... Unbuffered DIMM 6.3 256MB, 32M x 72 ECC Module (M381L3223FT(U)) (Populated as 1 bank of x8 DDR SDRAM Module) CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 6 DQ1 I DQ2 I/O 2 DQ3 I/O 0 DQ4 I/O 7 DQ5 I/O 5 DQ6 I/O 3 DQ7 I/O 1 DQS1 DM1 ...

Page 9

... Unbuffered DIMM 6.4 512MB, 64M x 64 Non ECC Module (M368L6423FT(U)) (Populated as 2 bank of x8 DDR SDRAM Module) CS1 CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 D0 I/O 6 DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 ...

Page 10

... Unbuffered DIMM 6.5 512MB, 64M x 72 ECC Module (M381L6423FT(U)) (Populated as 2 bank of x8 DDR SDRAM Module) CS1 CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 D0 I/O 6 DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 ...

Page 11

Unbuffered DIMM 7.0 Absolute Maximum Ratings Parameter Voltage on any pin relative Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device ...

Page 12

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC(DDR400@CL=3) B3(DDR333@CL=2.5) 440 600 16 120 100 220 300 880 1,000 800 ...

Page 13

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC(DDR400@CL=3) B0(DDR333@CL=2.5) 950 1,170 40 270 230 500 680 1,670 1,980 1,800 ...

Page 14

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC (DDR400@CL=3) B3 (DDR333@CL=2.5) 1,620 1,850 75 540 450 990 1,350 2,340 2,660 2,480 ...

Page 15

Unbuffered DIMM 10.0 AC Operating Conditions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK inputs Input Crossing Point ...

Page 16

Unbuffered DIMM 12.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data ...

Page 17

Unbuffered DIMM 13.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table ...

Page 18

Unbuffered DIMM 14.0 Component Notes 1. All voltages referenced to Vss. 2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci- fications and ...

Page 19

Unbuffered DIMM 15.0 System Notes: a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. b. Pulldown slew rate is measured under the test conditions shown in Figure 3. c. Pullup slew ...

Page 20

Unbuffered DIMM 16.0 Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Auto Precharge Enable Auto Precharge ...

Page 21

Unbuffered DIMM 17.0 Physical Dimensions 17.1 16M x 64 (M368L1624FT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 16Mx16 DDR SDRAM, TSOPII. DDR SDRAM ...

Page 22

Unbuffered DIMM 17.2 32Mx64 (M368L3223FT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F 5.25 ...

Page 23

Unbuffered DIMM 17.3 32Mx72 (M381L3223FT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F 5.25 ...

Page 24

Unbuffered DIMM 17.4 64Mx64 (M368L6423FT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F 5.25 ...

Page 25

Unbuffered DIMM 17.5 64Mx72 (M381L6423FT(U)) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838F 5.25 ...

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