M368L3223HUS-CCC Samsung Semiconductor, M368L3223HUS-CCC Datasheet

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M368L3223HUS-CCC

Manufacturer Part Number
M368L3223HUS-CCC
Description
Manufacturer
Samsung Semiconductor
Datasheet

Specifications of M368L3223HUS-CCC

Lead Free Status / RoHS Status
Compliant
256MB, 512MB Unbuffered DIMM
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE
CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER-
WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL-
OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT
GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar
184pin Unbuffered Module based on 256Mb H-die
* Samsung Electronics reserves the right to change products or specification without notice.
DDR SDRAM Unbuffered Module
applications where Product failure could result in loss of life or personal or physical harm, or any military or
defense application, or any governmental procurement to which special terms or provisions may apply.
66 TSOP-II with Lead-Free
with 64/72-bit Non ECC/ECC
(RoHS compliant)
-1 of 20
Rev. 1.01 August 2008
DDR SDRAM

Related parts for M368L3223HUS-CCC

M368L3223HUS-CCC Summary of contents

Page 1

... Unbuffered DIMM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb H-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Lead-Free INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHER- WISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOL- OGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS " ...

Page 2

... ECC Module (M381L6423HUM) 7.0 Absolute Maximum Ratings ....................................................................................................... 8 8.0 DC Operating Conditions ........................................................................................................... 8 9.0 DDR SDRAM IDD spec table ...................................................................................................... 9 9.1 M368L3223HUS [ (32M 256MB Non ECC Module ] 9.2 M381L3223HUM [ (32M 256MB ECC Module ] 9.3 M368L6423HUN [ (32M 16, 512MB Non ECC Module ] 9.4 M381L6423HUM [ (32M 18, 512MB ECC Module ] 10 ...

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Unbuffered DIMM Revision History Revision Month Year 1.0 November 2005 1.01 August 2008 - Initial release - typo correction DDR SDRAM History Rev. 1.01 August 2008 ...

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... Unbuffered DIMM 184Pin Unbuffered DIMM based on 256Mb H-die (x8) 1.0 Ordering Information Part Number M368L3223HUS-C(L)CC/B3 M381L3223HUM-C(L)CC/B3 M368L6423HUN-C(L)CC/B3 M381L6423HUM-C(L)CC/B3 2.0 Operating Frequencies Speed @CL2 Speed @CL2.5 Speed @CL3 CL-tRCD-tRP 3.0 Feature • 2.5V ± 0.2V 2.5V ± 0.2V for DDR333 DD DDQ • ...

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... Note : These pins are not used in this module. 2. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are used on x72 module ( M381~ ), and are not used on x64 module. 3. Pins 111, 158 are NC for 1row modules & used for 2row modules. 4. Pins 137, 138 are NC for x16 1Row module. ...

Page 6

... Unbuffered DIMM 6.0 Functional Block Diagram 6.1 256MB, 32M x 64 Non ECC Module (M368L3223HUS) (Populated as 1 bank of x8 DDR SDRAM Module) CS0 DQS0 DQS4 DM0 DM4 DM/ CS DQS DQ0 I/O 6 DQ1 D0 I/O 4 DQ2 I/O 2 DQ3 I/O 0 DQ4 I/O 7 DQ5 ...

Page 7

... Unbuffered DIMM 6.2 256MB, 32M x 72 ECC Module (M381L3223HUM) (Populated as 1 bank of x8 DDR SDRAM Module) CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 6 DQ1 I DQ2 I/O 2 DQ3 I/O 0 DQ4 I/O 7 DQ5 I/O 5 DQ6 I/O 3 DQ7 I/O 1 DQS1 DM1 DM/ ...

Page 8

... Unbuffered DIMM 6.3 512MB, 64M x 64 Non ECC Module (M368L6423HUN) (Populated as 2 bank of x8 DDR SDRAM Module) CS1 CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 D0 I/O 6 DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 ...

Page 9

... Unbuffered DIMM 6.4 512MB, 64M x 72 ECC Module (M381L6423HUM) (Populated as 2 bank of x8 DDR SDRAM Module) CS1 CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 D0 I/O 6 DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 DQS1 ...

Page 10

Unbuffered DIMM 7.0 Absolute Maximum Ratings Parameter Voltage on any pin relative Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device damage ...

Page 11

... Unbuffered DIMM 9.0 DDR SDRAM IDD spec table 9.1 M368L3223HUS [ (32M 256MB Non ECC Module ] Symbol IDD0 IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. ...

Page 12

... IDD1 IDD2P IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 Normal IDD6 Low power IDD7A * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. CC(DDR400@CL=3) B3(DDR333@CL=2.5) 1,360 1,560 64 480 400 800 1,040 1,880 1,880 1,960 ...

Page 13

... DC level of the same. DDQ envelope that has been bandwidth limited 20MHz. REF V =0.5*V TT DDQ R =50Ω T Z0=50Ω C =30pF LOAD Output Load Circuit (SSTL_2) M368L3223HUS Symbol Min CIN1 49 CIN2 42 CIN3 42 CIN4 25 CIN5 6 Cout1 6 Cout2 ...

Page 14

Unbuffered DIMM 12.0 AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in ...

Page 15

Unbuffered DIMM 13.0 System Characteristics for DDR SDRAM The following specification parameters are required in systems using DDR333 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design. Table 1 ...

Page 16

Unbuffered DIMM 14.0 Component Notes 1. All voltages referenced Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels, but the related speci- fications ...

Page 17

Unbuffered DIMM 15.0 System Notes: a. Pullup slew rate is characteristized under the test conditions as shown in Figure 2. b. Pulldown slew rate is measured under the test conditions shown in Figure 3. c. Pullup slew rate ...

Page 18

Unbuffered DIMM 16.0 Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Auto Precharge Disable Read & Column Address Auto Precharge Enable Auto Precharge Disable ...

Page 19

... Unbuffered DIMM 17.0 Physical Dimensions 17.1 32Mx64 (M368L3223HUS) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838H 5.25 ± 0.005 (133.350 ± 0.13) 5 ...

Page 20

Unbuffered DIMM 17.2 32Mx72 (M381L3223HUM) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838H 5.25 ± ...

Page 21

Unbuffered DIMM 17.3 64Mx64 (M368L6423HUS) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838H 5.25 ± ...

Page 22

Unbuffered DIMM 17.4 64Mx72 (M381L6423HUM) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838H 5.25 ± ...

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