MT8VDDT6464HG-335F3 Micron Technology Inc, MT8VDDT6464HG-335F3 Datasheet

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MT8VDDT6464HG-335F3

Manufacturer Part Number
MT8VDDT6464HG-335F3
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8VDDT6464HG-335F3

Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
64Mx64
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.4A
Number Of Elements
8
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / RoHS Status
Not Compliant
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL): 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 7.8125µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Single rank
• Gold edge contacts
Table 1:
DDR SDRAM SODIMM
MT8VDDT3264H – 256MB
MT8VDDT6464H – 512MB
For component data sheets, refer to Micron’s Web site:
PDF: 09005aef8092973f / Source: 09005aef80921669
DD8C32_64x64H.fm - Rev. D 9/08 EN
(SODIMM)
(-40B: V
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
maximum average periodic refresh interval
compatibility
DD
DDSPD
Speed
Grade
-26A
-40B
-335
-262
-265
= V
DD
DD
= +2.3V to +3.6V
Q = +2.5V
= V
Key Timing Parameters
Products and specifications discussed herein are subject to change by Micron without notice.
DD
Nomenclature
Notes:
Q = +2.6V)
Industry
PC3200
PC2700
PC2100
PC2100
PC2100
1. The values of
actual DDR SDRAM device specifications are 15ns.
CL = 3
1
400
t
RCD and
256MB, 512MB (x64, SR) 200-Pin DDR SDRAM SODIMM
Data Rate (MT/s)
CL = 2.5
t
www.micron.com
RP for -335 modules show 18ns to align with industry specifications;
333
333
266
266
266
1
Figure 1:
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
CL = 2
266
266
266
266
200
PCB height: 31.75mm (1.25in)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1. Not recommended for new designs.
2. Contact Micron for industrial temperature
module offerings.
200-Pin SODIMM (MO-224)
t
(ns)
RCD
15
18
15
20
20
A
A
2
≤ +85°C)
≤ +70°C)
(ns)
t
15
18
15
20
20
RP
©2004 Micron Technology, Inc. All rights reserved.
(ns)
1
1
t
55
60
60
65
65
RC
1
Marking
Features
None
-40B
-26A
-335
-262
-265
Notes
G
Y
I
1

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MT8VDDT6464HG-335F3 Summary of contents

Page 1

... RCD and RP for -335 modules show 18ns to align with industry specifications; Micron Technology, Inc., reserves the right to change products or specifications without notice. 1 Features 200-Pin SODIMM (MO-224) Marking 2 ≤ +70°C) None A ≤ +85°C) ...

Page 2

... MT8VDDT6464HY-40B__ MT8VDDT6464HG-335__ 512MB MT8VDDT6464HY-335__ 512MB 512MB MT8VDDT6464HG-265__ 512MB MT8VDDT6464HY-265__ Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT8VDDT6464HY-335F3. ...

Page 3

Pin Assignments and Descriptions Table 5: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin Symbol Pin Symbol 101 REF DQ19 103 SS 5 DQ0 55 DQ24 105 7 DQ1 57 ...

Page 4

... Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM power supply: +2.3V to +3.6V. Supply SSTL_2 reference voltage (V Supply Ground. – No connect: These pins are not connected on the module. 4 Pin Assignments and Descriptions 2 C bus. /2). DD Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 5

Functional Block Diagrams Figure 2: Functional Block Diagram – Layout 1 (256MB) S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 ...

Page 6

Figure 3: Functional Block Diagram – Layout 2 (256MB, 512MB) S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 DQ21 DQ22 DQ23 DQS4 DM4 DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 ...

Page 7

... Serial Presence-Detect Operation DDR SDRAM modules incorporate serial presence-detect. The SPD data is stored in a 256-byte EEPROM. The first 128 bytes are programmed by Micron to identify the module type and various DDR SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer. System READ/WRITE operations ...

Page 8

... Electrical Specifications Stresses greater than those listed in Table 7 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 9

... Micron encourages designers to simulate the signal characteristics of the system’s memory bus to ensure adequate signal integrity of the entire memory system. Power Operating voltages are specified at the DRAM, not at the edge connector of the module. Designers must account for any system voltage drops at anticipated power levels to ensure the required supply voltage is maintained. ...

Page 10

I Specifications DD Table 9: I Specifications and Conditions – 256MB (Die Revision K) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition ...

Page 11

Table 10: I Specifications and Conditions – 256MB (All Other Die Revisions) DD Values are for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x 8) component data sheet Parameter/Condition Operating one ...

Page 12

Table 11: I Specifications and Conditions – 512MB DD Values are shown for the MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter/Condition Operating one bank active-precharge current: ...

Page 13

Serial Presence-Detect Table 12: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage 3mA OUT Input leakage current GND ...

Page 14

... TYP TYP TYP 63.60 (2.504) TYP Back view 15.35 (0.604) 14 Module Dimensions U9 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 4.0 (0.157) TYP Pin 2 TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2004 Micron Technology, Inc. All rights reserved. ...

Page 15

... TYP Back view 15.35 (0.604) ® their respective owners. characterization sometimes occur. 15 Module Dimensions U9 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 4.0 (0.157) TYP Pin 2 TYP Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

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