MB85R1002PFTNGE1 Fujitsu Components, MB85R1002PFTNGE1 Datasheet
MB85R1002PFTNGE1
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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM CMOS 1 M Bit (64 K × 16) MB85R1002 ■ DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ...
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MB85R1002 ■ PIN ASSIGNMENT A15 A14 A13 A12 A11 A10 CE2 GND TOP VIEW ...
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I/ I/O10 I/O11 GND I/O12 I/O13 I/O15 I/O14 A14 A15 G I/O16 NC ...
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MB85R1002 ■ BLOCK DIAGRAM A0 · to · · A15 intCE2 CE2 intCEB CE1 4 Row Dec. Ferro Capacitor Cell Column Dec. S/A intCE2 intOE I/O1 to I/O8 intWE intCE2 intCEB I/O9 to I/O16 I/O16 · ...
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FUNCTION TRUTH TABLE Mode CE1 CE2 H X Standby Pre-charge X X Read L Read (Pseudo-SRAM control Write L Write (Pseudo-SRAM control Notes : ...
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MB85R1002 ■ ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage* Input Voltage* Output Voltage* Ambient Operating Temperature Storage Temperature * : All voltages are referenced to GND. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) ...
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ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS Parameter Symbol Input Leakage Current | Output Leakage Current | Operating Power Supply I CE1 = 0.2 V, CE2 = V CC Current CE1 ≥ V CE2 ≤ ...
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MB85R1002 2. AC TEST CONDITIONS Supply Voltage : 3 3.6 V Operating Temperature : − +85 o Input Voltage Amplitude : 0 2.7 V Input Rising Time : 5 ns Input Falling Time : ...
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Write Operation Parameter Write Cycle Time CE1 Active Time CE2 Active Time LB, UB Active Time Pre-Charge Time Address Setup Time Address Hold Time LB, UB Setup Time Write Pulse Width Data Setup Time Data Hold Time Write Setup ...
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MB85R1002 ■ TIMING DIAGRAMS 1. Read Cycle Timing (CE1, CE2 Control) CE1 CE2 A15 Valid I/O1 to I/O16 2. Read Cycle Timing (OE Control) CE1 CE2 t BS LB, ...
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Write Cycle Timing (CE1, CE2 Control) CE1 CE2 LB A15 WE Data In 4. Write Cycle Timing (WE Control) CE1 CE2 LB A15 WE Data In DS05-13104- CA1 t CA2 ...
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MB85R1002 ■ POWER ON/OFF SEQUENCE tpd V CC CE2 3 (Min (Max) IL GND CE2 ≤ 0.2 V CE1 > V CE1 + 0 CE1 (Max) < Notes: • ...
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ORDERING INFOMATION Part number MB85R1002PFTN-GE1 MB85R1002BGT-GE1 DS05-13104-6E MB85R1002 Package 48-pin plastic TSOP(1) (FPT-48P-M25) 48-pin plastic FBGA (BGA-48P-M23) 13 ...
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MB85R1002 ■ PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M25) 48-pin plastic TSOP(1) (FPT-48P-M25) LEAD No. 1 INDEX 24 14.00±0.20(.551±.008 12.40±0.10(.488±.004) 2003-2010 FUJITSU SEMICONDUCTOR LIMITED F48043S-c-2-4 C Please check the latest package dimension at the following URL. http://edevice.fujitsu.com/package/en-search/ 14 Lead ...
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FBGA (BGA-48P-M23) 48-pin plastic FBGA (BGA-48P-M23) 8.10 ± 0.20(.319 ± .008) (INDEX AREA) 0.10(.004) 2007-2010 FUJITSU SEMICONDUCTOR LIMITED B48023S-c-1-3 C Please check the latest package dimension at the following URL. http://edevice.fujitsu.com/package/en-search/ DS05-13104-6E Lead pitch Package width × ...
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MB85R1002 FUJITSU SEMICONDUCTOR LIMITED Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA ...