MB85R1002PFTNGE1 Fujitsu Components, MB85R1002PFTNGE1 Datasheet

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MB85R1002PFTNGE1

Manufacturer Part Number
MB85R1002PFTNGE1
Description
Manufacturer
Fujitsu Components
Type
NVSRAMr
Datasheet

Specifications of MB85R1002PFTNGE1

Word Size
16b
Density
1Mb
Interface Type
Parallel
Access Time (max)
100ns
Operating Supply Voltage (typ)
3.3V
Operating Temperature Classification
Commercial
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Pin Count
48
Mounting
Surface Mount
Supply Current
15mA
Lead Free Status / RoHS Status
Compliant
Copyright©2005-2010 FUJITSU SEMICONDUCTOR LIMITED All rights reserved
2010.6
Memory FRAM
CMOS
1 M Bit (64 K × 16)
MB85R1002
■ DESCRIPTIONS
■ FEATURES
The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits
of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R1002 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R1002 can be used for 10
improvement over the number of read and write operations supported by Flash memory and E
The MB85R1002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.
• Bit configuration
• Read/write endurance
• Operating power supply voltage : 3.0 V to 3.6 V
• Operating temperature range
• Data retention
• LB and UB data byte control
• Package
FUJITSU SEMICONDUCTOR
DATA SHEET
: 65,536 words × 16 bits
: 10
: − 40 °C to +85 °C
: 10 years (+55 °C)
: 48-pin plastic TSOP (1)
: 48-pin plastic FBGA
10
times/bit
10
read/write operations, which is a significant
DS05-13104-6E
2
PROM.

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MB85R1002PFTNGE1 Summary of contents

Page 1

FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM CMOS 1 M Bit (64 K × 16) MB85R1002 ■ DESCRIPTIONS The MB85R1002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 65,536 words x 16 bits of non-volatile memory cells created using ...

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MB85R1002 ■ PIN ASSIGNMENT A15 A14 A13 A12 A11 A10 CE2 GND TOP VIEW ...

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I/ I/O10 I/O11 GND I/O12 I/O13 I/O15 I/O14 A14 A15 G I/O16 NC ...

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MB85R1002 ■ BLOCK DIAGRAM A0 · to · · A15 intCE2 CE2 intCEB CE1 4 Row Dec. Ferro Capacitor Cell Column Dec. S/A intCE2 intOE I/O1 to I/O8 intWE intCE2 intCEB I/O9 to I/O16 I/O16 · ...

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FUNCTION TRUTH TABLE Mode CE1 CE2 H X Standby Pre-charge X X Read L Read (Pseudo-SRAM control Write L Write (Pseudo-SRAM control Notes : ...

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MB85R1002 ■ ABSOLUTE MAXIMUM RATINGS Parameter Supply Voltage* Input Voltage* Output Voltage* Ambient Operating Temperature Storage Temperature * : All voltages are referenced to GND. WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) ...

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ELECTRICAL CHARACTERISTICS 1. DC CHARACTERISTICS Parameter Symbol Input Leakage Current | Output Leakage Current | Operating Power Supply I CE1 = 0.2 V, CE2 = V CC Current CE1 ≥ V CE2 ≤ ...

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MB85R1002 2. AC TEST CONDITIONS Supply Voltage : 3 3.6 V Operating Temperature : − +85 o Input Voltage Amplitude : 0 2.7 V Input Rising Time : 5 ns Input Falling Time : ...

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Write Operation Parameter Write Cycle Time CE1 Active Time CE2 Active Time LB, UB Active Time Pre-Charge Time Address Setup Time Address Hold Time LB, UB Setup Time Write Pulse Width Data Setup Time Data Hold Time Write Setup ...

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MB85R1002 ■ TIMING DIAGRAMS 1. Read Cycle Timing (CE1, CE2 Control) CE1 CE2 A15 Valid I/O1 to I/O16 2. Read Cycle Timing (OE Control) CE1 CE2 t BS LB, ...

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Write Cycle Timing (CE1, CE2 Control) CE1 CE2 LB A15 WE Data In 4. Write Cycle Timing (WE Control) CE1 CE2 LB A15 WE Data In DS05-13104- CA1 t CA2 ...

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MB85R1002 ■ POWER ON/OFF SEQUENCE tpd V CC CE2 3 (Min (Max) IL GND CE2 ≤ 0.2 V CE1 > V CE1 + 0 CE1 (Max) < Notes: • ...

Page 13

ORDERING INFOMATION Part number MB85R1002PFTN-GE1 MB85R1002BGT-GE1 DS05-13104-6E MB85R1002 Package 48-pin plastic TSOP(1) (FPT-48P-M25) 48-pin plastic FBGA (BGA-48P-M23) 13 ...

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MB85R1002 ■ PACKAGE DIMENSIONS 48-pin plastic TSOP(1) (FPT-48P-M25) 48-pin plastic TSOP(1) (FPT-48P-M25) LEAD No. 1 INDEX 24 14.00±0.20(.551±.008 12.40±0.10(.488±.004) 2003-2010 FUJITSU SEMICONDUCTOR LIMITED F48043S-c-2-4 C Please check the latest package dimension at the following URL. http://edevice.fujitsu.com/package/en-search/ 14 Lead ...

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FBGA (BGA-48P-M23) 48-pin plastic FBGA (BGA-48P-M23) 8.10 ± 0.20(.319 ± .008) (INDEX AREA) 0.10(.004) 2007-2010 FUJITSU SEMICONDUCTOR LIMITED B48023S-c-1-3 C Please check the latest package dimension at the following URL. http://edevice.fujitsu.com/package/en-search/ DS05-13104-6E Lead pitch Package width × ...

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MB85R1002 FUJITSU SEMICONDUCTOR LIMITED Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA ...

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