IDT6116LA120TDB IDT, Integrated Device Technology Inc, IDT6116LA120TDB Datasheet

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IDT6116LA120TDB

Manufacturer Part Number
IDT6116LA120TDB
Description
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT6116LA120TDB

Density
16Kb
Access Time (max)
120ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
11b
Package Type
CDIP
Operating Temp Range
-55C to 125C
Number Of Ports
1
Supply Current
85mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
24
Word Size
8b
Number Of Words
2K
Lead Free Status / RoHS Status
Not Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IDT6116LA120TDB
Manufacturer:
IDT
Quantity:
1 133
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Features
Functional Block Diagram
©2006 Integrated Device Technology, Inc.
I/O
I/O
A
A
WE
CS
OE
High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
Low-power consumption
Battery backup operation
– 2V data retention voltage (LA version only)
Produced with advanced CMOS high-performance
technology
CMOS process virtually eliminates alpha particle soft-error
rates
Input and output directly TTL-compatible
Static operation: no clocks or refresh required
Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
Military product compliant to MIL-STD-833, Class B
10
0
0
7
CONTROL
CIRCUIT
DECODER
ADDRESS
CIRCUIT
INPUT
DATA
CMOS Static RAM
16K (2K x 8-Bit)
1
Description
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
Access times as fast as 15ns are available. The circuit also offers a
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
Military grade product is manufactured in compliance to the latest
I/O CONTROL
128 X 128
MEMORY
ARRAY
JANUARY 2009
IDT6116SA
IDT6116LA
DSC-3089/06
3089 drw 01
V
GND
CC
,

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IDT6116LA120TDB Summary of contents

Page 1

Features ◆ ◆ ◆ ◆ ◆ High-speed access and chip select times – Military: 20/25/35/45/55/70/90/120/150ns (max.) – Industrial: 20/25/35/45ns (max.) – Commercial: 15/20/25/35/45ns (max.) ◆ ◆ ◆ ◆ ◆ Low-power consumption ◆ ◆ ◆ ◆ ◆ Battery backup operation – ...

Page 2

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Pin Configurations P24 P24 D24 D24 SO24 SO24-4 ...

Page 3

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Recommended Operating Temperature and Supply Voltage Ambient Grade Temperature O O Military - +125 Industrial - +85 C Commercial +70 O ...

Page 4

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) DC Electrical Characteristics (V = 5.0V ± 10 0.2V Symbol Parameter Power I Operating Power Supply CC1 SA Current, CS < Outputs Open LA ...

Page 5

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Low V Data Retention Waveform 4.5V t CDR Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels AC Test ...

Page 6

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Read Cycle t Read Cycle Time RC t Address Access Time AA t Chip Select Access Time ACS (3) Chip Select to Output in Low-Z t CLZ ...

Page 7

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Read Cycle No. 1 ADDRESS OE CS DATA OUT Supply Currents I SB Timing Waveform of Read Cycle No. 2 ADDRESS DATA PREVIOUS DATA VALID ...

Page 8

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) AC Electrical Characteristics Symbol Parameter Write Cycle t Write Cycle Time WC t Chip Select to End-of-Write CW t Address Valid to End-of-Write AW t Address Set-up Time AS t Write Pulse ...

Page 9

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Timing Waveform of Write Cycle No. 1 (WE Controlled Timing) ADDRESS DATA PREVIOUS DATA VALID OUT DATA IN Timing Waveform of Write Cycle No. 2 (CS Controlled Timing) ...

Page 10

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Ordering Information — Military 6116 XX XXX Device Type Power Speed Ordering Information — Commercial & Industrial 6116 XX XXX Device Type Power Speed Military, Commercial, and Industrial Temperature Ranges X X ...

Page 11

IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Datasheet Document History 1/7/ Pg. 11 08/09/00 02/01/01 12/30/03 Pg. 3,10 03/31/05 Pg. 10 11/15/06 Pg. 3 Pg.4 CORPORATE HEADQUARTERS 6024 Silver Creek Valley ...

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