IDT7130SA55JG IDT, Integrated Device Technology Inc, IDT7130SA55JG Datasheet

IDT7130SA55JG

Manufacturer Part Number
IDT7130SA55JG
Description
Manufacturer
IDT, Integrated Device Technology Inc
Datasheet

Specifications of IDT7130SA55JG

Density
8Kb
Access Time (max)
55ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
5V
Address Bus
20b
Package Type
PLCC
Operating Temp Range
0C to 70C
Number Of Ports
2
Supply Current
155mA
Operating Supply Voltage (min)
4.5V
Operating Supply Voltage (max)
5.5V
Operating Temperature Classification
Commercial
Mounting
Surface Mount
Pin Count
52
Word Size
8b
Number Of Words
1K
Lead Free Status / RoHS Status
Compliant
I/O
Features
Functional Block Diagram
NOTES:
1. IDT7130 (MASTER): BUSY is open drain output and requires pullup resistor.
2. Open drain output: requires pullup resistor.
©2008 Integrated Device Technology, Inc.
0L
High-speed access
– Commercial: 20/25/35/55/100ns (max.)
– Industrial: 25/55/100ns (max.)
– Military: 25/35/55/100ns (max.)
Low-power operation
– IDT7130/IDT7140SA
– IDT7130/IDT7140LA
MASTER IDT7130 easily expands data bus width to 16-or-
more-bits using SLAVE IDT7140
IDT7140 (SLAVE): BUSY is input.
BUSY
- I/O
R/W
Active: 550mW (typ.)
Standby: 5mW (typ.)
Active: 550mW (typ.)
Standby: 1mW (typ.)
INT
OE
CE
A
A
7L
9L
0L
L
L
L
L
L
(1,2)
(2)
Decoder
Address
R/W
OE
CE
L
L
L
10
Control
I/O
HIGH SPEED
1K X 8 DUAL-PORT
STATIC SRAM
ARBITRATION
INTERRUPT
MEMORY
ARRAY
LOGIC
and
1
On-chip port arbitration logic (IDT7130 Only)
BUSY output flag on IDT7130; BUSY input on IDT7140
INT flag for port-to-port communication
Fully asynchronous operation from either port
Battery backup operation–2V data retention (LA only)
TTL-compatible, single 5V ±10% power supply
Military product compliant to MIL-PRF-38535 QML
Industrial temperature range (–40°C to +85°C) is available
for selected speeds
Available in 48-pin DIP, LCC and Ceramic Flatpack, 52-pin
PLCC, and 64-pin STQFP and TQFP
Green parts available, see ordering information
Control
I/O
10
Address
Decoder
R/W
CE
OE
R
R
R
OCTOBER 2008
IDT7130SA/LA
IDT7140SA/LA
2689 drw 01
OE
CE
R/W
I/O
BUSY
A
A
INT
DSC-2689/14
9R
0R
R
0R
R
R
R
(2)
-I/O
R
(1,2)
7R
,

Related parts for IDT7130SA55JG

IDT7130SA55JG Summary of contents

Page 1

... IDT7140 (SLAVE): BUSY is input. 2. Open drain output: requires pullup resistor. ©2008 Integrated Device Technology, Inc. HIGH SPEED DUAL-PORT STATIC SRAM On-chip port arbitration logic (IDT7130 Only) BUSY output flag on IDT7130; BUSY input on IDT7140 INT flag for port-to-port communication Fully asynchronous operation from either port Battery backup operation– ...

Page 2

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Description The IDT7130/IDT7140 are high-speed Dual-Port Static RAMs. The IDT7130 is designed to be used as a stand-alone 8-bit Dual-Port RAM "MASTER" Dual-Port RAM together with the IDT7140 "SLAVE" Dual-Port in 16-bit-or-more word width systems. Using the IDT MASTER/SLAVE Dual-Port RAM approach in 16-or- more-bit memory system applications results in full-speed, error- free operation without the need for additional discrete logic ...

Page 3

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Pin Configurations (1,2,3) 01/08/02 INDEX I/O 0L I/O 1L I/O 2L I/O 3L 01/08/02 INDEX N N/C I/O 0L I/O 1L I/O 2L NOTES: 1. All V pins must be connected to power supply All GND pins must be connected to ground supply. 3. J52-1 package body is approximately . . .17 in. ...

Page 4

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Absolute Maximum Ratings Symbol Rating Commercial & Industrial (2) V Terminal Voltage -0.5 to +7.0 TERM with Respect to GND T Temperature -55 to +125 BIAS Under Bias Storage -65 to +150 T STG Temperature I DC Output 50 OUT Current NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device ...

Page 5

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol Parameter CE and CE I Dynamic Operating CC L Current Outputs Disabled (Both Ports Active) ( MAX CE and CE I Standby Current SB1 L (3) (Both Ports - TTL MAX ...

Page 6

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Data Retention Characteristics Symbol Parameter V V for Data Retention Data Retention Current CCDR (3) t Chip Deselect to Data Retention Time CDR (3) t Operation Recovery Time R NOTES 2V +25°C, and is not production tested Read Cycle Time RC 3 ...

Page 7

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM AC Test Conditions Input Pulse Levels Input Rise/Fall Times Input Timing Reference Levels Output Reference Levels Output Load 5V DATA OUT 775Ω Figure 1. Output Test Load 5V BUSY or INT Figure 3. BUSY and INT AC Output Test Load Military, Industrial and Commercial Temperature Ranges GND to 3 ...

Page 8

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM AC Electrical Characteristics Over the Operating Temperature Supply Voltage Range Symbol Parameter READ CYCLE t Read Cycle Time RC t Address Access Time AA t Chip Enable Access Time ACE t Output Enable Access Time AOE t Output Hold from Address Change ...

Page 9

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Timing Waveform of Read Cycle No. 1, Either Side ADDRESS DATA PREVIOUS DATA VALID OUT BUSY OUT NOTES and Address is valid prior to the coincidental with CE transition LOW delay is required only in the case where the opposite port is completing a write operation to the same the address location. For simultaneous read operations, BDD BUSY has no relationship to valid output data ...

Page 10

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM AC Electrical Characteristics Over the Operating Temperature Supply Voltage Range Symbol Parameter WRITE CYCLE (3) t Write Cycle Time WC t Chip Enable to End-of-Write EW t Address Valid to End-of-Write AW t Address Set-up Time AS (4) t Write Pulse Width WP t Write Recovery Time ...

Page 11

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Timing Waveform of Write Cycle No. 1, (R/W Controlled Timing) ADDRESS R/W (4) DATA OUT DATA IN Timing Waveform of Write Cycle No. 2, (CE Controlled Timing) ADDRESS CE ( R/W DATA IN NOTES must be HIGH during all address transitions write occurs during the overlap (t ...

Page 12

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM AC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Symbol BUSY TIMING (For MASTER IDT 7130) BUSY Access Time from Address t BAA BUSY Disable Time from Address t BDA BUSY Access Time from Chip Enable ...

Page 13

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Timing Waveform of Write with Port-to-Port Read and BUSY ADDR "A" "A " DATA IN"A" (1) t APS ADDR "B" BUSY "B" DATA OUT"B" NOTES ensure that the earlier of the two ports wins for the reading port. ...

Page 14

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Timing Waveform of BUSY Arbitration Controlled by CE Timing ADDR AND 'A' 'B' CE 'B' (2) t APS CE 'A' BUSY 'A' Timing Waveform by BUSY Arbitration Controlled by Address Match Timing ADDR ADDRESSES MATCH 'A' (2) t APS ADDR 'B' t BUSY 'B' NOTES: 1. All timing is the same for left and right ports. Port “A” may be either left or right port. Port “B” is the opposite from port “A”. ...

Page 15

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM AC Electrical characteristics Over the Operating Temperature and Supply Voltage Range Symbol INTERRUPT TIMING t Address Set-up Time AS t Write Recovery Time WR t Interrupt Set Time INS t Interrupt Reset Time INR NOTES: 1. 'X' in part numbers indicates power rating (SA or LA). ...

Page 16

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Truth Tables Truth Table I — Non-Contention Read/Write Control (1) Inputs CE OE R DATA DATA NOTES – A • A – 10L 0R 10R 2. If BUSY = L, data is not written BUSY = L, data may not be valid, see t and t WDD 'X' = DON’ ...

Page 17

... The message (8 bits) at 3FE or 3FF is user-defined, since addressable SRAM location. If the interrupt function is not used, address locations 3FE and 3FF are not used as mail boxes, but as part of the random access memory ...

Page 18

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Ordering Information XXXX A 999 Device Type Power Speed Package NOTES: 1. Contact your local sales office for industrial temp range for other speeds, packages and powers. 2. Green parts available. For specific speeds, pacakges and powers contact your local sales office. ...

Page 19

... IDT7130SA/LA and IDT7140SA/LA High-Speed Dual-Port Static SRAM Datasheet Document History (cont'd) 01/08/02: Page 5, 8, 10, 12, & 14 Page 5, 8, 10, 12, & 14 Page 18 Page 1 & 19 01/11/06: Page 1 Page 18 Page 1 & 19 04/14/06: Page 18 10/21/08: Page 18 CORPORATE HEADQUARTERS 6024 Silver Creek Valley Road San Jose, CA 95138 The IDT logo is a registered trademark of Integrated Device Technology, Inc ...

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