BTS7750GPNT Infineon Technologies, BTS7750GPNT Datasheet

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BTS7750GPNT

Manufacturer Part Number
BTS7750GPNT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of BTS7750GPNT

Operating Current
5.2mA
Operating Temperature Classification
Automotive
Package Type
TO-263
Operating Supply Voltage (min)
3.2V
Operating Supply Voltage (max)
42V
Lead Free Status / RoHS Status
Not Compliant
TrilithIC
Data Sheet
1
1.1
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R
• Maximum peak current: typ. 12 A @ 25 C=
• Very low quiescent current: typ. 5 ←A @ 25 C=
• Small outline, thermal optimized PowerPak
• Full short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 1 kHz
Type
BTS 7750 GP
1.2
The BTS 7750 GP is part of the TrilithIC
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7750 GP can be used in H-bridge- as well as in any other
configuration. Both the double high-side and the two low-side switches of the
BTS 7750 GP are manufactured in SMART SIPMOS
R
fully protected and contains the control and diagnosis circuitry. Also the low-side
switches are fully protected, the equivalent standard product is the BTS 134 D.
In contrast to the BTS 7750 G, which consists of the same chips in an P-DSO-28
package, the P-TO263-15-1 PowerPack offers a much lower thermal resistance, which
opens up applications with even higher currents in the automotive and industrial area.
Data Sheet
DS ON
side switch (typical values @ 25 C)
vertical DMOS power stages with CMOS control circuitry. The high-side switch is
Overview
Features
Description
DS ON
: 70 mτ high-side switch, 45 mτ low-
Ordering Code
Q67006-A9402
1
family containing three dies in one package:
®
technology which combines low
Package
P-TO263-15-1
P-TO263-15-1
BTS 7750 GP
2001-02-01

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BTS7750GPNT Summary of contents

Page 1

TrilithIC Data Sheet 1 Overview 1.1 Features • Quad D-MOS switch driver • Free configurable as bridge or quad-switch • Optimized for DC motor management applications • Low mτ high-side switch, 45 mτ low side ...

Page 2

Pin Configuration (top view) IL1 SL1 SH1 5 GND 6 IH1 7 DHVS IH2 10 SH2 IL2 SL2 15 Figure 1 Data Sheet Molding ...

Page 3

Pin Definitions and Functions Pin No. Symbol 1 IL1 SL1 SH1 6 GND 7 IH1 8 DHVS IH2 11 SH2 IL2 SL2 16 DL2 ...

Page 4

Functional Block Diagram IH1 10 IH2 6 GND 1 IL1 13 IL2 Figure 2 Block Diagram Data Sheet DHVS 8, 17 Diagnosis Biasing and Protection Driver IN OUT ...

Page 5

Circuit Description Input Circuit The control inputs IH1,2 consist of TTL/CMOS compatible Schmitt-Triggers with hysteresis. Buffer amplifiers are driven by these stages and convert the logic signal into the necessary form for driving the power output stages. The inputs ...

Page 6

Status Flag The status flag output is an open drain output with Zener-diode which requires a pull-up resistor, c.f. the application circuit on page 14. Various errors as listed in the table “Diagnosis” are detected by switching the open drain ...

Page 7

Electrical Characteristics 3.1 Absolute Maximum Ratings – 40 C < T < 150 C j Parameter High-Side-Switches (Pins DHVS, IH1,2 and SH1,2) Supply voltage Supply voltage for full short circuit protection HS-drain current HS-input current HS-input voltage Note: * ...

Page 8

Absolute Maximum Ratings (cont’d) – 40 C < T < 150 C j Parameter Thermal Resistances (one HS-LS-Path active) LS-junction case HS-junction case Junction ambient /( j(HS) (HS) (LS) thja ESD Protection (Human Body ...

Page 9

Electrical Characteristics – 40 C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Current Consumption HS-switch Quiescent current Supply current Leakage current of highside switch Leakage current through ...

Page 10

Electrical Characteristics (cont’ – 40 C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Output stages Inverse diode of high-side switch; Forward-voltage Inverse diode of lowside switch; Forward-voltage ...

Page 11

Electrical Characteristics (cont’ – 40 C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Thermal Shutdown Thermal shutdown junction temperature Thermal switch-on junction temperature Temperature hysteresis Status Flag ...

Page 12

Electrical Characteristics (cont’ – 40 C < SH1 SH2 SL1 SL2 unless otherwise specified Parameter Switching times of lowside switch Turn-ON-time ...

Page 13

IH1 IH1 7 V STL V STZ I IH1 IH2 10 V IH1 GND 6 V IH2 I GND I LKCL I IL1 1 IL1 I V IL2 13 IL2 ...

Page 14

R Q 100 kτ τ τ τ kτ τ τ τ IH1 IH2 GND µP IL1 IL2 GND In case of V <-0.6V or reverse battery the current into the µC might ...

Page 15

Package Outlines P-TO263-15-1 (Plastic Transistor Single Outline Package) 1 ±0.2 5.56 ±0.15 1) 4.8 14x1.4 1) Typical All metal surfaces tin plated, except area of cut. Sorts of Packing Package outlines for tubes, trays etc. are contained in our ...

Page 16

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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