BTS3160DXT Infineon Technologies, BTS3160DXT Datasheet
BTS3160DXT
Specifications of BTS3160DXT
Related parts for BTS3160DXT
BTS3160DXT Summary of contents
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... Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7.3 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7.4 Electrical Characteristics Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 8 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 8.1 Dimensioning of serial Resistor at IN pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 8.2 Further Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 9 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 Datasheet Smart Low Side Power Switch HITFET - BTS3160D 2 Table of Contents Rev. 1.1, 2008-02-28 ...
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... Smart Low Side Power Switch HITFET - BTS3160D 1 Overview The BTS3160D is a one channel low-side power switch in PG-TO-252-5-13 package providing embedded protective functions. The power transistor is realized by a N-channel vertical power MOSFET. The device is controlled by a chip in Smart Power Technology. Features • ...
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... The power transistor is build by a N-channel vertical power MOSFET. The device is controlled by a control chip in Smart Power Technology. The device is able to switch all kind of resistive, inductive and capacitive loads. For lamp loads the lamp-inrush- current, eight- to ten-times the nominal current, has to be considered. The maximal inrush current has to be below the minimum short circuit shutdown current ...
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... Block Diagram Under V voltage S lockout Gate IN / Driving Fault Unit ESD Protection Figure 1 Block Diagram for the BTS3160D Datasheet Smart Low Side Power Switch Over- Over- voltage temperature Protection Protection Error Logic Short circuit Protection 5 HITFET - BTS3160D Block Diagram Drain ϑ GND B loc k Diagram ...
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... Voltage and current naming definition Following figure shows all the terms used in this datasheet, with associated convention for positive values GND Figure 2 Terms Datasheet Fault GND I GND 6 Smart Low Side Power Switch HITFET - BTS3160D Block Diagram Drain V D Terms .emf Rev. 1.1, 2008-02-28 ...
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... Ground; Signal ground, Pin 4 and 5 must be externally shorted 1) Not shorting pin 4 and 5 will considerably increase the on-state resistance and reduce the peak current capability. Datasheet BTS3160D GND 5 GND Fault Smart Low Side Power Switch HITFET - BTS3160D Pin Configuration P inConfiguration.emf 1) Rev. 1.1, 2008-02-28 ...
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... Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Datasheet Smart Low Side Power Switch General Product Characteristics Symbol Limit Values Min ...
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... Thermal Resistance Pos. Parameter 4.3.1 Junction to Case 4.3.2 Junction to Ambient 1) Not subject to production test, specified by design Datasheet Smart Low Side Power Switch Symbol Limit Values Min. Typ. Max 13 – ...
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... Device × × 1.5 mm epoxy PCB FR4 with 6 cm drain connection. PCB mounted vertical without blown air. Datasheet Single pulse - ° Smart Low Side Power Switch HITFET - BTS3160D General Product Characteristics Zth.emf 2 (one layer, 70 µm thick) copper area for Rev. 1.1, 2008-02-28 ...
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... Datasheet Figure V S Regulator Z D GND V S(min SUVOFF SUVON 11 Smart Low Side Power Switch HITFET - BTS3160D Supply and Input Stage 5. Due to an internal voltage regulator the S upply.emf is monitored by the S . There is no failure feedback for LO_Hys teresis .emf Rev. 1.1, 2008-02-28 < SUVON ...
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... Input Circuit Figure 7 shows the input circuit of the BTS3160D. It’s ensured that the device switches off in case of open input pin. A zener structure protects the input circuit against ESD pulses. As the BTS3160D has a supply pin, the operation of the power MOS can be maintained regardless of the voltage on the IN pin, therefore a digital status feedback down to logic low is realized. For readout of the fault information, please refer to Information” ...
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... Digital Input / Fault Feedback 5.3.4 Low level voltage 5.3.5 High level voltage 5.3.6 Input pull down current 5.3.7 Input Fault ON threshold 1) not subject to production test Datasheet Smart Low Side Power Switch Symbol Limit Values Min. Typ. Max. V – – 5.5 SUVON 4.0 – ...
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... The on-state resistance depends on the supply voltage as well as on the junction temperature T the dependency over temperature for the typical on-state resistance R dependency over Vs. 16,00 14,00 12,00 10,00 8,00 6,00 4,00 -40 -15 Figure 9 Typical On-State Resistance Datasheet Smart Low Side Power Switch V =10V S typ 110 135 T [ ° HITFET - BTS3160D Power Stage . ...
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... Figure 10 Typical On-State Resistance & Figure 11 Typical Output Characteristics, Datasheet typ [ DSon S = 10V S = 30V typ °C, Parameter Jstart 15 Smart Low Side Power Switch HITFET - BTS3160D Power Stage 30 rdson_V s.emf 1 Rev. 1.1, 2008-02-28 Outputchar.emf ...
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... Figure 12 Typical Zero Input Voltage Drain Current, Datasheet typ 100 125 150 175 T [°C] Tj [° DSS J 16 Smart Low Side Power Switch HITFET - BTS3160D Power Stage Zeroindrain.emf Rev. 1.1, 2008-02-28 ...
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... Output Timing and Slopes A high signal on the input pin causes the power MOSFET to switch on with a dedicated slope which is optimized for low EMC emission. Figure 13 IN High Low t V ond Figure 13 Switching a resistive Load In order to minimize the emission during switching the BTS3160D limits the slopes during turn on- and off to slow slew rate settings ...
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... Inductive Output Clamp When switching off inductive loads with low-side switches, the Drain Source voltage V potential, because the inductance intends to continue driving the current. The BTS3160D is equipped with a voltage clamp mechanism that keeps the Drain-Source voltage V level. See Figure 15 for more details. ...
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... For maximum single avalanche energy please also refer to E 10,0 1,0 0,1 0,0 10 Figure 17 Maximum load inductance for single pulse 150 °C L j,start Datasheet Smart Low Side Power Switch value in “Energies” on Page 30V bb Max HITFET - BTS3160D Power Stage 100 EAS.emf ...
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... Turn-on delay 6.4.7 Turn-on time 6.4.8 Turn-off delay 6.4.9 Turn-off time 6.4.10 Slew rate on 6.4.11 Slew rate off 6.4.12 Slew rate during edge shaping Datasheet Smart Low Side Power Switch Symbol Limit Values Min. Typ. Max. R – DS(on) – 7.8 9.7 – ...
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... Fault signal delay Inverse Diode 6.4.15 Inverse Diode forward voltage 1) Not subject to production test. 2) Device × × 1.5 mm epoxy PCB FR4 with 6 cm PCB mounted vertical without blown air. Datasheet Smart Low Side Power Switch Symbol Limit Values Min. Typ. Max. |dI/dt| – ...
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... Figure 19 shows the behavior mentioned above. In this example the short circuit always occurs after the dSC device has switched on under normal load condition - Short circuit type 2. The definitions of voltages and currents are in respect to Figure 8. The behavior of V Datasheet Smart Low Side Power Switch ...
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... INfau lt I INn High Low Figure 20 Turn On into Existing Short Circuit, Typical Behavior for Ohmic Loads The case when the device switches on into an existing short circuit - Short circuit type 1- is shown in Datasheet Short circuit t dfau lt Short Circuit shut off fau lt d fau lt ...
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... Figure 21 Test Setup for Short Circuit Characterization Test Datasheet Figure Vcc Control circuit R IN BTS3160 GND 24 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions 21. The BTS3160D is a low side switch Drain GND S etup_S hort_c irc uit.emf Rev. 1.1, 2008-02- ...
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... Not subject to production test, specified by design. Datasheet Symbol Limit Values Min. Typ. T 150 175 JSD ∆ T – 10 JSD DAZ – 45 ≤ 100 DSC dSC 25 Smart Low Side Power Switch HITFET - BTS3160D Protection Functions Unit Conditions Max. 1) °C – 6 – 6 – ...
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... During fault state the device keeps protection active as long as it can sink more than the threshold current case the device can not sink this current, it resets the protection and waits for the next input high Fault_ONth signal avoid an unintentional switch ON/OFF behavior, the input current must be above this threshold. Datasheet IFault_ONth to avoid immediate restart ...
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... We recommend 3k3 for a 3.3V µC and 5k6 for a 5V µC to achieve a logic low signal. 8.2 Further Application Information • For further information you may contact Datasheet R I ,max / > IN Fault_ONth V ,min INH http://www.infineon.com/hitfet 27 Smart Low Side Power Switch HITFET - BTS3160D Application Information output stage micro controller Fault_ONth. Rev. 1.1, 2008-02-28 ...
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... You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products. Datasheet +0.15 6.5 -0. 5.7 MAX. ( 0.6 ±0.1 1.14 0. Smart Low Side Power Switch HITFET - BTS3160D Package Outlines B +0.05 2.3 -0.10 +0.08 0.5 -0.04 +0.20 0.9 -0.01 0...0.15 +0.08 0.5 -0.04 ...
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... RoHS logo to overview page and added green feature to list Rev. 1.0 2007-08-14 first released datasheet revision Datasheet Smart Low Side Power Switch 29 HITFET - BTS3160D Revision History Rev. 1.1, 2008-02-28 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life ...