SI1865DL-T3 Vishay, SI1865DL-T3 Datasheet

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SI1865DL-T3

Manufacturer Part Number
SI1865DL-T3
Description
Manufacturer
Vishay
Datasheet

Specifications of SI1865DL-T3

Lead Free Status / RoHS Status
Not Compliant
DESCRIPTION
The Si1865DL includes a p- and p-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The
n-channel, with an external resistor, can be used as a level-
shift to drive the p-channel load-switch. The n-channel
MOSFET has internal ESD protection and can be driven by
logic signals as low as 1.5 V. The Si1865DL operates on
supply lines from 1.8 V to 8 V, and can drive loads up to 1.2 A.
APPLICATION CIRCUITS
* Minimum R1 value should be least 10 x R2 to ensure Q1 turn-on.
Document Number: 71297
S10-1054-Rev. D, 03-May-10
ON/OFF
PRODUCT SUMMARY
COMPONENTS
R1
R2
C1
V
1.8 to 8
DS2
V
R2
IN
(V)
C
R1
i
Optional Slew-Rate Control
Optional Slew-Rate Control
Pull-Up Resistor
4
6
5
0.215 at V
0.300 at V
0.440 at V
Q2
Q1
R
Si1865DL
DS(on)
1
R2
IN
IN
IN
(Ω)
= 4.5 V
= 2.5 V
= 1.8 V
Load Switch with Level-Shift
2, 3
6
Typical 0 kΩ to 100 kΩ*
Typical 10 kΩ to 1 mΩ*
C
C1
o
Typical 1000 pF
I
± 1.2
± 1.0
± 0.7
D
(A)
V
GND
LOAD
OUT
FEATURES
The Si1865DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
devices saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
• Halogen-free According to IEC 61249-2-21
• 215 mΩ Low R
• 1.8 V to 8 V Input
• 1.5 V to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• 2000 V ESD Protection On Input Switch, V
• Adjustable Slew-Rate
• 1.8 V Rated
• Compliant to RoHS Directive 2002/95/EC
Definition
20
16
12
8
4
0
0
Note: For R2 switching variations with other V
I
V
C
C
L
ON/OFF
i
o
= 1 A
= 10 µF
= 1 µF
R2 at V
combinations see Typical Characteristics
2
DS(on)
= 3 V
Switching Variation
IN
t
d(on)
TrenchFET
= 2.5 V, R1 = 20 kΩ
4
R2 (kΩ)
6
Vishay Siliconix
t
®
d(off)
Si1865DL
8
www.vishay.com
ON/OFF
t
t
r
f
IN
/R1
10
1

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SI1865DL-T3 Summary of contents

Page 1

... The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5 V. The Si1865DL operates on supply lines from 1 and can drive loads up to 1.2 A. APPLICATION CIRCUITS ...

Page 2

... D2 ON/OFF Ordering Information: Si1865DL-T1-E3 (Lead (Pb)-free) Si1865DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Input Voltage ON/OFF Voltage Load Current a Continuous Intrinsic Diode Conduction a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-833D Human Body Model (100 pF, 1500 Ω) ...

Page 3

... Variance vs. Junction Temperature DROP Document Number: 71297 S10-1054-Rev. D, 03-May- °C J 2.0 2.5 3 °C J 1.0 1.2 1.4 1 100 125 150 Si1865DL Vishay Siliconix 1 1 ON/OFF 0.8 0 125 ° °C J 0.2 0.0 0.0 0.5 1.0 1 2.5 V DROP ...

Page 4

... Si1865DL Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted ON/OFF 1 0.7 0 Junction Temperature (°C) J Normalized On-Resistance vs. Junction Temperature ON/OFF µ µ d(on (kΩ) Switching Variation 2 kΩ IN 200 160 t f 120 ON/OFF µ µ (kΩ) Switching Variation 4 300 kΩ ...

Page 5

... Document Number: 71297 S10-1054-Rev. D, 03-May-10 120 d(off ON/OFF µ µ d(on (kΩ) Switching Variation 1 300 kΩ Square Wave Pulse Dureation (s) Si1865DL Vishay Siliconix 80 Notes Duty Cycle Per Unit Base = R = 320 °C thJA ( thJA 4. Surface Mounted 1 10 100 www.vishay.com 600 5 ...

Page 6

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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