APT50GT120B2RDQ2G MICROSEMI, APT50GT120B2RDQ2G Datasheet

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APT50GT120B2RDQ2G

Manufacturer Part Number
APT50GT120B2RDQ2G
Description
Manufacturer
MICROSEMI
Datasheet

Specifications of APT50GT120B2RDQ2G

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Package Type
TO-247
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50GT120B2RDQ2G
Manufacturer:
Microsemi Power Products Group
Quantity:
135
Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is made with two parallel
IGBT die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
The Thunderbolt IGBT
Non-Punch-Through Technology, the Thunderbolt IGBT
ness and ultrafast switching speed.
Maximum Ratings
Static Electrical Characteristics
Symbol Parameter
Symbol Characteristic / Test Conditions
T
V
V
V
SSOA
Features
• Low Forward Voltage Drop
• Low Tail Current
• RoHS Compliant
J
V
(BR)CES
V
, T
GE(TH)
CE(ON)
I
I
I
P
I
I
CES
GES
T
CM
CES
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063” from Case for 10 Sec.
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector Emitter On Voltage (V
Collector Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
®
Thunderbolt IGBT
is a new generation of high voltage power IGBTs. Using
1
CE
CE
CE
Microsemi Website - http://www.microsemi.com
= V
= 1200V, V
= 1200V, V
GE
GE
GE
GE
= 15V, I
= 15V, I
C
C
• RBSOA and SCSOA Rated
• High Frequency Switching to 50KHz
• Ultra Low Leakage Current
, I
= 100°C
= 25°C
J
= ±20V)
= 150°C
C
= 2mA, T
®
GE
GE
GE
C
C
®
= 0V, I
= 50A, T
= 50A, T
= 0V, T
= 0V, T
offers superior rugged-
j
= 25°C)
C
= 3mA)
j
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
2
All Ratings: T
2
APT50GT120B2RDQ2G
C
= 25°C unless otherwise specified.
1200V, 50A, V
1200
Min
4.5
2.7
-
-
-
-
150A @ 1200V
-55 to 150
Ratings
1200
±30
150
625
300
94
50
Typ
5.5
3.2
4.0
-
-
-
-
CE(ON)
.
Max
TBD
300
300
6.5
3.7
= 3.2V Typical
-
-
Amps
Unit
Volts
Watts
Unit
Volts
°C
μA
nA

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APT50GT120B2RDQ2G Summary of contents

Page 1

... I = 50A 125° 1200V 0V 25° 1200V 0V 125° ±20V) GE Microsemi Website - http://www.microsemi.com APT50GT120B2RDQ2G 1200V, 50A 3.2V Typical CE(ON) = 25°C unless otherwise specified. C Ratings 1200 ± Amps 150 150A @ 1200V 625 -55 to 150 300 Min Typ Max 1200 - - 4.5 5 ...

Page 2

... E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) off external gate resistance not including gate driver impedance. G Microsemi reserves the right to change, without notice, the specifications and information contained herein. Test Conditions 25V GE CE ...

Page 3

... T = 150° 25° 100A FIGURE 6, On State Voltage vs Junction Temperature 100 100 125 150 FIGURE 8, DC Collector Current vs Case Temperature APT50GT120B2RDQ2G 15V 13V 11V 10V COLLECTOR-TO-EMITTER VOLTAGE (V) CE FIGURE 2, Output Characteristics (T = 25° 50A V = 240V 25° 600V 960V ...

Page 4

... FIGURE 14, Turn-Off Energy Loss vs Collector Current 20,000 E 100A on2, 15,000 10,000 5,000 E 100A off, E 50A off, E 25A on2, E 25A off FIGURE 16, Switching Energy Losses vs Junction Temperature APT50GT120B2RDQ2G V =15V,T =125° =15V,T =25° 800V CE 1.0Ω 100µ 100 ...

Page 5

... SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) 120 100 T (° 0.151 Figure 20, Operating Frequency vs Collector Current APT50GT120B2RDQ2G 160 140 120 100 200 400 600 800 1000 1200 1400 V , COLLECTOR-TO-EMITTER VOLTAGE CE FIGURE 18, Minimum Switching Safe Operating Area Note Duty Factor D = ...

Page 6

... Figure 21, Inductive Switching Test Circuit 90 125°C J 90% Gate Voltage t d(off) Collector Voltage t f 10% Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on 10% Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions 0 APT50GT120B2RDQ2G Gate Voltage T = 125°C J 90% Collector Current 5% Collector Voltage ...

Page 7

... T = 125° SINGLE PULSE RECTANGULAR PULSE DURATION (seconds) T (°C) T (° 0.570 0.231 0.00241 0.210 FIGURE 24b, TRANSIENT THERMAL IMPEDANCE MODEL APT50GT120B2RDQ2G = 25°C unless otherwise specified. C APT50GT120B2RDQ2G 30 43 210 Min Type Max 2.8 3.3 3.4 2.1 Min Typ Max 320 - - 545 - - 4 ...

Page 8

... CURRENT RATE OF CHANGE (A/µs) F Figure 28. Reverse Recovery Current vs. Current Rate of Change 150 25 50 Case Temperature (°C) Figure 30. Maximum Average Forward Current vs. CaseTemperature APT50GT120B2RDQ2G 60A 30A 15A 400 600 800 1000 1200 60A 30A 15A 400 600 800 1000 1200 Duty cycle = 0 175° ...

Page 9

... Max. 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT50GT120B2RDQ2G D.U. Waveform PEARSON 2878 CURRENT TRANSFORMER 0.25 I RRM 3 2 5.38 (.212) 6 ...

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