APT30GT60BRG

Manufacturer Part NumberAPT30GT60BRG
ManufacturerMICROSEMI
APT30GT60BRG datasheets

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Specifications of APT30GT60BRG

Channel TypeNConfigurationSingle
Collector-emitter Voltage600VCollector Current (dc) (max)64A
Package TypeTO-247Pin Count3 +Tab
MountingThrough HoleOperating Temperature (max)150C
Operating Temperature ClassificationMilitaryLead Free Status / RoHS StatusCompliant
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Symbol
Characteristic
C
Input Capacitance
ies
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
V
Gate-to-Emitter Plateau Voltage
GEP
3
Q
Total Gate Charge
g
Q
Gate-Emitter Charge
ge
Q
Gate-Collector ("Miller ") Charge
gc
Switching Safe Operating Area
SSOA
t
Turn-on Delay Time
d(on)
t
Current Rise Time
r
t
Turn-off Delay Time
d(off)
t
Current Fall Time
f
E
Turn-on Switching Energy
on1
E
Turn-on Switching Energy (Diode)
on2
E
Turn-off Switching Energy
off
t
Turn-on Delay Time
d(on)
t
Current Rise Time
r
t
Turn-off Delay Time
d(off)
t
Current Fall Time
f
E
Turn-on Switching Energy
on1
E
Turn-on Switching Energy (Diode)
on2
E
Turn-off Switching Energy
off
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
R
Junction to Case (IGBT)
θ
JC
R
Junction to Case (DIODE)
θ
JC
W
Package Weight
T
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
includes both IGBT and FRED leakages
ces
3 See MIL-STD-750 Method 3471.
4 E
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
on1
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
on2
loss. (See Figures 21, 22.)
6 E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
off
APT Reserves the right to change, without notice, the specifications and information contained herein.
Test Conditions
Capacitance
V
= 0V, V
GE
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 300V
CE
I
= 30A
C
T
= 150°C, R
= 10Ω, V
J
G
15V, L = 100µH,V
Inductive Switching (25°C)
V
= 400V
CC
V
= 15V
GE
I
= 30A
C
R
= 10Ω
4
G
T
= +25°C
J
5
6
Inductive Switching (125°C)
V
= 400V
CC
V
= 15V
GE
I
= 30A
C
R
= 10Ω
4
4
G
T
= +125°C
J
55
6
MIN
TYP
MAX
1600
150
= 25V
92
7.5
145
10
60
=
GE
110
= 600V
CE
12
20
225
80
525
605
600
12
20
245
100
570
965
830
MIN
TYP
MAX
.50
N/A
5.9
UNIT
pF
V
nC
A
ns
µ
J
ns
µ
J
UNIT
°C/W
gm

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