IRG4PH40UD2-EPBF International Rectifier, IRG4PH40UD2-EPBF Datasheet

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IRG4PH40UD2-EPBF

Manufacturer Part Number
IRG4PH40UD2-EPBF
Description
Manufacturer
International Rectifier
Datasheet

Specifications of IRG4PH40UD2-EPBF

Channel Type
N
Configuration
Single
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Package Type
TO-247AD
Pin Count
3 +Tab
Mounting
Through Hole
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRG4PH40UD2-EPBF
Manufacturer:
IR
Quantity:
6 700
Features
V
I
I
I
I
I
I
V
P
P
T
T
R
R
R
R
Wt
www.irf.com
Absolute Maximum Ratings
Thermal / Mechanical Characteristics
C
C
CM
LM
F
FM
J
STG
CES
GE
D
D
θJC
θJC
θCS
θJA
@ Tc = 100°C
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C Maximum Power Dissipation
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load current
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 screw
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
TM
d
G
n-channel
300 (0.063 in. (1.6mm) from case)
Min.
–––
–––
–––
–––
–––
C
E
10 lbf
-55 to +150
6 (0.21)
y
Max.
1200
in (1.1N
Typ.
0.24
±20
160
–––
–––
–––
41
21
82
82
10
40
65
y
CE(on) typ.
m)
GE
CES
TO-247AD
Max.
0.77
–––
–––
2.5
40
=
C
Units
Units
g (oz.)
°C/W
°C
W
V
A
V
1

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IRG4PH40UD2-EPBF Summary of contents

Page 1

Features Absolute Maximum Ratings V Collector-to-Emitter Voltage CES 25°C Continuous Collector Current 100°C Continuous Collector Current C C Pulse Collector Current I CM Clamped Inductive Load current ...

Page 2

Electrical Characteristics @ T Parameter Collector-to-Emitter Breakdown Voltage V (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS ΔV /ΔT Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th) ΔV /ΔT Threshold Voltage temp. coefficient ...

Page 3

For both: 15 Duty cycle : 50 125°C 10 Tsink = 90°C Gate drive as specified 5 Power Dissipation = 35W 0 0.1 100 T = 150 ...

Page 4

T , Case Temperature ( 0.50 0.20 0.1 0.10 0.05 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 4 4 15V GE 80 ...

Page 5

0V MHZ C ies = SHORTED 3500 C res = oes = 3000 Cies 2500 2000 1500 ...

Page 6

Ω 150° 800V 15V Collecto-to-Emitter (A) 6 1000 V = 20V GE ...

Page 7

www.irf.com (rec ...

Page 8

Same type device as D.U.T. 430μF 80% of Vce D.U. off(diode d(on) GATE VOLTAGE D.U.T. 10% +Vg +Vg Vce 10% Ic Vcc 90 Vce td(on d(on +Vge 10% ...

Page 9

Figure 18e. Macro Waveforms for 1000V 50V 6000μF 100V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT Figure 18a's L D.U. ...

Page 10

Notes : This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WIT H AS SEMBL Y INTERNATIONAL LOT CODE 5657 RECTIFIER AS S EMBLED ON WW 35, 2000 LOGO SEMBLY ...

Page 11

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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