GT60N321 Toshiba, GT60N321 Datasheet
GT60N321
Specifications of GT60N321
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GT60N321 Summary of contents
Page 1
... ECFP P 170 150 °C j −55 to 150 T °C stg ⎯ 0.8 N･m Marking TOSHIBA GT60N321 JAPAN 1 GT60N321 Unit: mm JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2010-01-07 ...
Page 2
... V 0 − off = ECF di/dt = −20 A/μ ⎯ R th(j-c) ⎯ R th(j-c) 2 GT60N321 Min Typ. Max Unit ⎯ ⎯ ±500 ⎯ ⎯ 1.0 ⎯ 3.0 6.0 ⎯ 1.6 2.3 ⎯ 2.3 2.8 ⎯ ⎯ 4000 ⎯ ⎯ 0.23 ⎯ ⎯ 0.33 ⎯ 0.25 ...
Page 3
... Gate-emitter voltage V GE (V) I – 100 Common Emitter 125° Gate-emitter voltage Gate-emitter voltage Gate-emitter voltage Common emitter − Case temperature Tc (°C) 3 GT60N321 V – Common emitter Tc = −40° – Common emitter Tc = 125° – (sat 120 160 2010-01-07 ...
Page 4
... Collector-emitter voltage V CE (V) 80 300 100 1000 3000 Collector-emitter voltage V CE (V) 4 GT60N321 Switching time – off 100 1000 Ω Gate resistance – Common emitter ies MHz 25°C C oes C res 10 100 1000 10000 Reverse Bias SOA T j ≤ ...
Page 5
... Tc = 125° 0.0 0.5 Collector-emitter forward voltage V ECF ( 1.6 40 1.2 30 0 100 GT60N321 I – V ECF ECF −40 25 1.0 1.5 2.0 2 – di/ Common emitter I ECF = 0 25°C 0.6 0.4 0.2 0 100 150 200 250 di/dt (A/μs) ...
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... Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 6 GT60N321 2010-01-07 ...