FGA15N120ANDTU_NL Fairchild Semiconductor, FGA15N120ANDTU_NL Datasheet
FGA15N120ANDTU_NL
Specifications of FGA15N120ANDTU_NL
Related parts for FGA15N120ANDTU_NL
FGA15N120ANDTU_NL Summary of contents
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... Symbol R (IGBT) Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2003 Fairchild Semiconductor Corporation Features • High speed switching • Low saturation voltage : V • High input impedance • CO-PAK, IGBT with FRD : t TO-3PN unless otherwise noted C Description @ T ...
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... Gate-Collector Charge gc L Internal Emitter Inductance e Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr Diode Peak Reverse Recovery I rr Current Q Diode Reverse Recovery Charge rr ©2003 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 3mA 1200 0V 3mA ...
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... Case Temperature, T Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 20 Common Emitter T = 25℃ 24A 4 15A Gate-Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2003 Fairchild Semiconductor Corporation 80 Common Emitter 17V V GE 15V T = 25℃ 125℃ 12V 10V [V] CE Fig 2. Typical Saturation Voltage Characteristics ...
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... Gate Resistance, R Fig 9. Turn-Off Characteristics vs. Gate Resistance Common Emitter = ± 15V 25℃ 125℃ C 100 td(on Collector Current, I Fig 11. Turn-On Characteristics vs. Collector Current ©2003 Fairchild Semiconductor Corporation Common Emitter 1MHz 25℃ C 100 [V] CE Fig 8. Turn-On Characteristics vs. Gate Common Emitter 15A 25℃ C ...
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... Collector - Emitter Voltage, V Fig 15. SOA Characteristics 10 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse 1E-3 1E-5 Fig 17. Transient Thermal Impedance of IGBT ©2003 Fairchild Semiconductor Corporation 16 Common Emitter Eon Eoff [A] C Fig 14. Gate Charge Characteristics ...
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... Forward Voltage , V Fig 18. Forward Characteristics 7000 6000 di/dt = 200A/ s 5000 4000 di/dt = 100A/ s 3000 2000 1000 Forward Current , I Fig 20. Stored Charge ©2003 Fairchild Semiconductor Corporation 125 ℃ ℃ 1.6 2.0 2.4 [V] F Fig 19. Reverse Recovery Current 400 ...
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... Mechanical Dimensions ©2003 Fairchild Semiconductor Corporation TO-3PN Dimensions in Millimeters FGA15N120AND Rev. A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...