TYPICAL PERFORMANCE CURVES
Resonant Mode Combi IGBT
The Thunderbolt IGBT
®
used in this Resonant Mode Combi is a new generation of high
voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT
superior ruggedness and ultrafast switching speed.
Features
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• Low forward Diode Voltage (V
)
F
• Ultrasoft Recovery Diode
MAXIMUM RATINGS
Parameter
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GE
I
Continuous Collector Current @ T
C1
I
Continuous Collector Current @ T
C2
Pulsed Collector Current
I
CM
Switching Safe Operating Area @ T
SSOA
P
Total Power Dissipation
D
T
,T
Operating and Storage Junction Temperature Range
J
STG
T
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
L
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
V
Collector-Emitter Breakdown Voltage (V
(BR)CES
V
Gate Threshold Voltage
GE(TH)
Collector-Emitter On Voltage (V
V
CE(ON)
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
I
CES
Collector Cut-off Current (V
I
Gate-Emitter Leakage Current (V
GES
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
®
Typical Applications
• Induction Heating
• SSOA Rated
• RoHS Compliant
• Welding
• Medical
• High Power Telecom
• Resonant Mode Phase Shifted
Bridge
All Ratings: T
= 25°C
C
= 110°C
C
1
= 150°C
J
= 0V, I
= 250µA)
GE
C
(V
= V
, I
= 700µA, T
= 25°C)
CE
GE
C
j
= 15V, I
= 30A, T
= 25°C)
GE
C
j
= 15V, I
= 30A, T
= 125°C)
GE
C
j
= 600V, V
= 0V, T
= 25°C)
CE
GE
j
= 600V, V
= 0V, T
= 125°C)
CE
GE
j
= ±20V)
GE
Microsemi Website - http://www.microsemi.com
APT30GT60BRDL(G)
600V
APT30GT60BRDL(G)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
®
offers
G
C
E
G
= 25°C unless otherwise specifi ed.
C
APT30GT60BRDL(G)
600
±30
64
30
110
110A @ 600V
250
-55 to 150
300
MIN
TYP
MAX
600
3
4
1.6
2.0
2.5
2.8
2
50
2
1250
±100
C
E
UNIT
Volts
Amps
Watts
°C
Units
5
Volts
µA
nA