SGL40N150DTUNL

Manufacturer Part NumberSGL40N150DTUNL
ManufacturerFairchild Semiconductor
SGL40N150DTUNL datasheets

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Specifications of SGL40N150DTUNL

Channel TypeNConfigurationSingle
Collector Current (dc) (max)40AGate To Emitter Voltage (max)±25V
Pin Count3 +TabMountingThrough Hole
Operating Temperature (min)-55Operating Temperature (max)150C
Operating Temperature ClassificationMilitaryLead Free Status / RoHS StatusCompliant
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SGL40N150D
General Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT)
provides low conduction and switching losses.
The SGL40N150D is designed for induction heating
applications.
Applications
Home appliances, induction heaters, IH JAR, and microwave ovens.
G
C
E
Absolute Maximum Ratings
Symbol
V
Collector-Emitter Voltage
CES
V
Gate-Emitter Voltage
GES
Collector Current
I
C
Collector Current
I
Pulsed Collector Current
CM (1)
I
Diode Continuous Forward Current
F
I
Diode Maximum Forward Current
FM
P
Maximum Power Dissipation
D
Maximum Power Dissipation
T
Operating Junction Temperature
J
T
Storage Temperature Range
stg
Maximum Lead Temp. for Soldering
T
L
Purposes, 1/8” from Case for 5 Seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
(IGBT)
Thermal Resistance, Junction-to-Case
JC
R
(DIODE)
Thermal Resistance, Junction-to-Case
JC
R
Thermal Resistance, Junction-to-Ambient
JA
©2002 Fairchild Semiconductor Corporation
Features
• High speed switching
• Low saturation voltage : V
• High input impedance
• Built-in fast recovery diode
TO-264
T
= 25 C unless otherwise noted
C
Description
@ T
= 25 C
C
@ T
= 100 C
C
@ T
= 100 C
C
@ T
= 25 C
C
@ T
= 100 C
C
Parameter
IGBT
= 3.7 V @ I
= 40A
CE(sat)
C
C
C
G
G
E
E
SGL40N150D
Units
1500
V
25
V
40
A
20
A
120
A
10
A
100
A
200
W
80
W
-55 to +150
C
-55 to +150
C
300
C
Typ.
Max.
Units
--
0.625
C/W
--
0.83
C/W
--
25
C/W
SGL40N150D Rev. A1

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SGL40N150DTUNL Summary of contents

  • Page 1

    ... Symbol R (IGBT) Thermal Resistance, Junction-to-Case JC R (DIODE) Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient JA ©2002 Fairchild Semiconductor Corporation Features • High speed switching • Low saturation voltage : V • High input impedance • Built-in fast recovery diode TO-264 unless otherwise noted C Description @ T ...

  • Page 2

    ... Turn-Off Delay Time d(off) t Fall Time f Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector Charge gc Electrical Characteristics of DIODE Symbol Parameter V Diode Forward Voltage FM t Diode Reverse Recovery Time rr ©2002 Fairchild Semiconductor Corporation unless otherwise noted C Test Conditions Min 0V 250uA 1500 CES ...

  • Page 3

    ... Common Emitter V = 15V Case Temperature, T Fig 3. Collector to Emitter Saturation Voltage vs. Case Temperature 80A 40A 4 20A Gate - Emitter Voltage, V Fig 5. Saturation Voltage vs. V ©2002 Fairchild Semiconductor Corporation 120 10V 100 12V [V] CE Fig 2. Typical Output Characteristics 6000 5000 I = 80A C 4000 I = 40A 3000 C I ...

  • Page 4

    ... Collector Current, I Fig 9. Switching Loss vs. Collector Current Common Emitter = ± 15V V = 600V 40A 1000 125 100 td(on Gate Resistance, R Fig 11. Turn-On Characteristics vs. Gate Resistance ©2002 Fairchild Semiconductor Corporation 1000 Common Emitter = ± 15V 125 td(off) 100 [A] C Fig 8. Turn-On Characteristics vs. 1000 ...

  • Page 5

    ... T = 125℃ C 100℃ 1 0.1 0.01 1E-3 300.0 600.0 900.0 Reverse Voltage, V Fig 17. Reverse Current vs. Reverse Voltage ©2002 Fairchild Semiconductor Corporation I MAX (Pulsed) 100 C I MAX (Continuous Single Nonrepetitive Pulse T 0.1 Curves must be derated linearly with increase in temperature 0.01 ...

  • Page 6

    ... Package Dimension 20.00 (8.30) (7.00) 4.90 0.20 (1.50) 2.50 0.20 5.45TYP [5.45 ] 0.30 ©2002 Fairchild Semiconductor Corporation TO-264 0.20 (8.30) (1.00) (0.50) (7.00) (1.50) 3.00 0.20 +0.25 1.00 –0.10 5.45TYP [5.45 ] 0.30 (2.00) (1.50) +0.25 0.60 2.80 0.30 –0.10 Dimensions in Millimeters ...

  • Page 7

    ... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DenseTrench™ GTO™ ...

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