APT50GP60JDQ2

Manufacturer Part NumberAPT50GP60JDQ2
ManufacturerMICROSEMI
APT50GP60JDQ2 datasheets

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Specifications of APT50GP60JDQ2

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Symbol
Characteristic
C
Input Capacitance
ies
C
Output Capacitance
oes
C
Reverse Transfer Capacitance
res
V
Gate-to-Emitter Plateau Voltage
GEP
3
Q
Total Gate Charge
g
Q
Gate-Emitter Charge
ge
Q
Gate-Collector ("Miller ") Charge
gc
Switching Safe Operating Area
SSOA
t
Turn-on Delay Time
d(on)
t
Current Rise Time
r
t
Turn-off Delay Time
d(off)
t
Current Fall Time
f
E
Turn-on Switching Energy
on1
E
Turn-on Switching Energy (Diode)
on2
E
Turn-off Switching Energy
off
t
Turn-on Delay Time
d(on)
t
Current Rise Time
r
t
Turn-off Delay Time
d(off)
t
Current Fall Time
f
E
Turn-on Switching Energy
on1
E
Turn-on Switching Energy (Diode)
on2
E
Turn-off Switching Energy
off
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
R
Junction to Case (IGBT)
θ
JC
R
Junction to Case (DIODE)
θ
JC
W
Package Weight
T
V
RMS Voltage
(50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Isolation
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
includes both IGBT and FRED leakages
ces
3 See MIL-STD-750 Method 3471.
4 E
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
on1
adding to the IGBT turn-on loss. (See Figure 24.)
5 E
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
on2
loss. (See Figures 21, 22.)
6 E
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
off
APT Reserves the right to change, without notice, the specifications and information contained herein.
Test Conditions
Capacitance
V
= 0V, V
GE
CE
f = 1 MHz
Gate Charge
V
= 15V
GE
V
= 300V
CE
I
= 50A
C
T
= 150°C, R
= 4.3Ω, V
J
G
15V, L = 100µH,V
Inductive Switching (25°C)
V
= 400V
CC
V
= 15V
GE
I
= 50A
C
R
= 4.3Ω
4
G
T
= +25°C
J
5
6
Inductive Switching (125°C)
V
= 400V
CC
V
= 15V
GE
I
= 50A
C
R
= 4.3Ω
4
4
G
T
= +125°C
J
55
6
MIN
TYP
MAX
5700
465
= 25V
30
7.5
165
40
50
=
GE
190
= 600V
CE
19
36
85
60
465
835
635
19
36
115
85
465
1260
1060
MIN
TYP
MAX
.38
1.21
29.2
2500
UNIT
pF
V
nC
A
ns
µ
J
ns
µ
J
UNIT
°C/W
gm
Volts

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