APT50GP60JDQ2

Manufacturer Part NumberAPT50GP60JDQ2
ManufacturerMICROSEMI
APT50GP60JDQ2 datasheets

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Specifications of APT50GP60JDQ2

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70
60
50
40
T
= -55°C
J
30
T
= 25°C
J
20
T
= 125°C
J
10
0
0
0.5
1.0
1.5
2.0
2.5
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
FIGURE 1, Output Characteristics(T
J
100
250µs PULSE
TEST<0.5 % DUTY
90
CYCLE
80
70
60
50
T
= -55°C
J
40
T
= 25°C
J
30
T
= 125°C
J
20
10
0
0
1
2
3
4
5
6
7
8
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
3.5
T
= 25°C.
J
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
2.5
2.0
1.5
1.0
0.5
0
6
8
10
12
14
V
, GATE-TO-EMITTER VOLTAGE (V)
GE
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.20
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-50
-25
0
25
50
75
100 125
T
, JUNCTION TEMPERATURE (°C)
J
FIGURE 7, Breakdown Voltage vs. Junction Temperature
70
60
50
40
30
20
T
J
10
0
3.0
0
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
CE
= 25°C)
FIGURE 2, Output Characteristics (T
16
I
= 50A
C
T
= 25°C
J
14
12
10
8
6
4
2
0
9
10
0
20
33.5
3
2.5
2
1.5
1
0.5
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
16
-50
-25
FIGURE 6, On State Voltage vs Junction Temperature
140
120
100
80
60
40
20
0
-50
-25
FIGURE 8, DC Collector Current vs Case Temperature
T
= -55°C
J
T
= 25°C
J
= 125°C
0.5
1.0
1.5
2.0
2.5
3.0
= 125°C)
J
V
= 120V
CE
V
= 300V
CE
V
= 480V
CE
40
60
80 100 120 140 160 180
GATE CHARGE (nC)
FIGURE 4, Gate Charge
V
= 15V.
GE
0
25
50
75
100
125
T
, Junction Temperature (°C)
J
0
25
50
75 100 125 150
T
, CASE TEMPERATURE (°C)
C

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