APT50GP60JDQ2

Manufacturer Part NumberAPT50GP60JDQ2
ManufacturerMICROSEMI
APT50GP60JDQ2 datasheets

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Specifications of APT50GP60JDQ2

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TYPICAL PERFORMANCE CURVES
10,000
1,000
500
100
50
10
0
10
20
30
V
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
CE
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.40
D = 0.9
0.35
0.30
0.7
0.25
0.5
0.20
0.15
0.3
0.10
0.05
0.1
0.05
0
10
10
-5
-4
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
Junction
temp. (°C)
0.0775
Power
0.216
(watts)
0.0855
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
200
C
ies
180
160
140
120
C
oes
100
80
60
C
40
res
20
0
40
50
0
V
Figure 18,Minimim Switching Safe Operating Area
SINGLE PULSE
10
10
10
-3
-2
RECTANGULAR PULSE DURATION (SECONDS)
220
100
50
0.0158
0.313
°
T
= 125
C
J
°
T
= 75
C
C
D = 50 %
4.49
V
= 667V
CE
R
= 4.3Ω
G
10
10
20
I
, COLLECTOR CURRENT (A)
C
Figure 20, Operating Frequency vs Collector Current
APT50GP60JDQ2
100
200
300
400
500
600
700
, COLLECTOR TO EMITTER VOLTAGE
CE
Note:
t 1
t 2
t 1
Duty Factor D =
/
t 2
Peak T J = P DM x Z θJC + T C
1.0
10
-1
F
= min (f
max
f
=
max1
t
d(on)
P
f
=
max2
E
T
P
=
diss
R
30
40
50
60
70
80
, f
)
max
max2
0.05
+ t
+ t
+ t
r
d(off)
f
- P
diss
cond
+ E
on2
off
- T
J
C
θJC