BSM150GB170DLC Infineon Technologies, BSM150GB170DLC Datasheet

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BSM150GB170DLC

Manufacturer Part Number
BSM150GB170DLC
Description
IGBT Modules 1700V 150A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM150GB170DLC.pdf (9 pages)

Specifications of BSM150GB170DLC

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.7kV
Collector Current (dc) (max)
300A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Collector-emitter Saturation Voltage
2.6 V
Continuous Collector Current At 25 C
300 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
1.25 KW
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
62MM
Ic (max)
150.0 A
Vce(sat) (typ)
2.6 V
Technology
IGBT2 Low Loss
Housing
62 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM150GB170DLC
Manufacturer:
INFINEON
Quantity:
219
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM150GB170DLC
Quantity:
50
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collctor current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Charakteristische Werte / Characteristic values
Transistor / Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Regine Mallwitz
approved by: Chr. Lübke; 28.11.2000
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
tp = 1 ms
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
V
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 28.11.2000
revision: 2 (Series)
BSM 150 GB 170 DLC
P
C
C
C
C
C
C
R
GE
CE
CE
CE
= 1 ms, T
= 150A, V
= 150A, V
= 7mA, V
=25°C, Transistor
= 80 °C
= 25 °C
= 0V, t
= 1700V, V
= 1700V, V
= 0V, V
= -15V ... +15V
p
= 10ms, T
vj
vj
CE
GE
C
GE
GE
= 25°C,V
= 25°C,V
= 80°C
= V
= 20V, T
= 15V, T
= 15V, T
GE
GE
GE
= 0V, T
= 0V, T
1(8)
, T
Vj
CE
CE
vj
vj
= 125°C
vj
vj
= 25°C
= 25°C
= 25V, V
= 25V, V
= 25°C
= 125°C
vj
vj
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
C
I
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
ISOL
GES
I
CES
I
I
C
2
tot
F
ies
res
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
4.500
1700
1250
typ.
0,05
150
300
300
150
300
3,4
2,6
3,1
5,5
1,8
0,5
10
4
-
BSM150GB170DLC
max.
200
3,2
3,6
6,5
0,3
-
-
-
A
µC
mA
mA
nF
nF
nA
W
kV
V
A
A
A
V
A
A
V
V
V
2
s

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BSM150GB170DLC Summary of contents

Page 1

... V 1700 V CES I 150 A C,nom. I 300 300 A CRM P 1250 W tot V +/- 20V V GES I 150 300 A FRM 2 2 4.500 3,4 kV ISOL min. typ. max 2,6 3 sat - 3,1 3 4,5 5,5 6,5 V GE(th 1,8 - µ ies res I - 0,05 0,3 mA CES - 200 nA GES BSM150GB170DLC ...

Page 2

... mWs mWs off I - 600 - sCE CC’+EE’ min. typ. max 2,1 2 2,1 2 110 - 130 - µ µ rec - 30 - mWs BSM150GB170DLC ...

Page 3

... BSM 150 GB 170 DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = 1 W/m W/m*K Paste grease terminals M6 3(8) min. typ. max 0,1 K/W thJC - - 0,24 K 0,012 K/W thCK 150 ° -40 - 125 ° -40 - 125 °C stg max max 340 g BSM150GB170DLC ...

Page 4

... BSM 150 GB 170 DLC 15V GE 1,5 2,0 2,5 3,0 3 VGE = 19V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1,5 2,0 2,5 3,0 3,5 V [ 25° 125°C 4,0 4,5 5 125°C vj 4,0 4,5 5,0 BSM150GB170DLC ...

Page 5

... Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 300 250 200 150 100 50 0 0,0 0,5 BSM 150 GB 170 DLC 25° 125° [ 25° 125°C 1,0 1,5 V [ 20V 2,0 2,5 3,0 BSM150GB170DLC ...

Page 6

... Schaltverluste (typisch) Switching losses (typical) 160 140 120 100 BSM 150 GB 170 DLC off = 900V, T gon goff CE Eoff Eon Erec 100 150 200 I [ 150A , V = 900V , Eoff Eon Erec 6( rec C = 125°C j 250 300 = off G rec G = 125° BSM150GB170DLC ...

Page 7

... IC,Chip 200 150 100 200 400 (t) thJC Zth:Diode Zth:IGBT 0 [sec 11,16 32,28 48,09 0,0047 0,0356 0,0613 44,67 88,51 88,51 0,0062 0,0473 0,0473 Ohm 600 800 1000 1200 V [V] CE 7(8) 10 100 4 8,47 0,4669 18,32 0,2322 = 125°C vj 1400 1600 1800 BSM150GB170DLC ...

Page 8

... Technische Information / Technical Information IGBT-Module BSM 150 GB 170 DLC IGBT-Modules 8(8) vorläufige Daten preliminary data BSM150GB170DLC ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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