BSM75GD120DLC Infineon Technologies, BSM75GD120DLC Datasheet

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BSM75GD120DLC

Manufacturer Part Number
BSM75GD120DLC
Description
IGBT Modules N-CH 1.2KV 125A
Manufacturer
Infineon Technologies
Datasheet
1.BSM75GD120DLC.pdf (9 pages)

Specifications of BSM75GD120DLC

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
1.2kV
Collector Current (dc) (max)
125A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Continuous Collector Current At 25 C
125 A
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
Econo 3
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM75GD120DLC
Manufacturer:
EUPEC
Quantity:
25
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM75GD120DLC
Manufacturer:
EUPEC
Quantity:
492
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSM75GD120DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM75GD120DLC
Quantity:
50
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Mark Münzer
approved by: M. Hierholzer
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f = 50 Hz, t = 1 min.
I
I
I
f = 1MHz,T
f = 1MHz,T
V
V
V
date of publication: 09.09.1999
revision: 2
BSM75GD120DLC
P
P
C
C
C
V
C
C
C
R
CE
CE
CE
= 1 ms, T
= 1 ms
GE
=25°C, Transistor
= 75A, V
= 75A, V
= 3mA, V
= 80 °C
= 25 °C
= 0V, t
= 1200V, V
= 1200V, V
= 0V, V
= -15V...+15V
p
vj
vj
GE
GE
= 10ms, T
C
CE
GE
= 25°C,V
= 25°C,V
= 80°C
= 15V, T
= 15V, T
= V
= 20V, T
GE
GE
GE
= 0V, T
= 0V, T
, T
Vj
CE
CE
vj
vj
vj
vj
= 125°C
= 25°C
= 125°C
= 25V, V
= 25V, V
= 25°C
= 25°C
vj
vj
1(8)
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
I
V
V
V
V
C,nom.
I
I
I
C
C
I
P
CRM
CE sat
GE(th)
Q
FRM
CES
GES
I
ISOL
CES
I
GES
I
2
C
ies
res
tot
F
G
t
min.
4,5
-
-
-
-
-
-
-
-
+/- 20V
1200
typ.
1,19
0,33
125
150
500
150
300
2,5
2,1
2,4
5,5
0,8
5,1
75
75
3
-
Seriendatenblatt_BSM75GD120DLC.xls
max.
400
2,6
2,9
6,5
92
-
-
-
-
kA
kV
nF
nF
nA
W
V
A
A
A
V
A
A
V
V
V
C
A
A
2
s

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BSM75GD120DLC Summary of contents

Page 1

... date of publication: 09.09.1999 revision: 2 1(8) V 1200 V CES C,nom. I 125 150 A CRM P 500 W tot V +/- 20V V GES 150 A FRM 2,5 kV ISOL min. typ. max 2,1 2 sat - 2,4 2 4,5 5,5 6,5 V GE( ies res CES - 300 - 400 nA GES Seriendatenblatt_BSM75GD120DLC.xls ...

Page 2

... E - 7,5 - mWs mWs off I - 540 - sCE CC‘+EE‘ min. typ. max 1,8 2 1,7 2 105 - µ 16,5 - µ mWs rec - 6,2 - mWs Seriendatenblatt_BSM75GD120DLC.xls ...

Page 3

... This technical information specifies semiconductor devices but promises no characteristics valid in combination with the belonging technical notes. BSM75GD120DLC Transistor / transistor, DC Diode/Diode, DC pro Modul / per module = Paste grease screw M5 3(8) min. typ. max 0,25 K/W thJC - - 0,55 K 0,009 - K/W thCK 150 ° -40 - 125 ° -40 - 150 °C stg 225 300 g Seriendatenblatt_BSM75GD120DLC.xls ...

Page 4

... Ausgangskennlinienfeld (typisch) Output characteristic (typical) 150 125 VGE = 17V VGE = 15V VGE = 13V VGE = 11V 100 VGE = 9V VGE = 0,0 0,5 1,0 BSM75GD120DLC 15V GE 1,5 2,0 2 1,5 2,0 2,5 3,0 3,5 V [ 3,0 3,5 4 125°C vj 4,0 4,5 5,0 Seriendatenblatt_BSM75GD120DLC.xls ...

Page 5

... IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 150 125 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 150 125 100 0,0 0,5 BSM75GD120DLC 20V 25° 125° [ 25° 125°C 1,0 1,5 2,0 V [ 2,5 3,0 Seriendatenblatt_BSM75GD120DLC.xls ...

Page 6

... Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 24 Eoff 20 Eon Erec Schaltverluste (typisch) Switching losses (typical) 30 Eoff 25 Eon Erec BSM75GD120DLC off C V =15V 600V gon goff 100 I [ off V =15V , I = 75A , V = 600V , 6( rec C = 125°C j 125 150 ) , rec G = 125° Seriendatenblatt_BSM75GD120DLC.xls ...

Page 7

... IC,Modul IC,Chip 200 BSM75GD120DLC Z thJC 0 [sec 27,96 84,63 0,002 0,03 71,97 190,64 0,002 0, 15V 400 600 800 1000 V [ (t) Zth:Diode Zth:IGBT 10 100 3 4 110,28 27,13 0,066 1,655 207,99 79,40 0,072 0,682 = 10 Ohm 125° 1200 1400 Seriendatenblatt_BSM75GD120DLC.xls ...

Page 8

... Technische Information / Technical Information IGBT-Module IGBT-Modules Econo 3.81 connections to be made externally IS8 BSM75GD120DLC 118.11 94.5 119 121.5 99 19.05 = 76.2 19.05 3. 1.15x1.0 15. 15.24 =76.2 110 8( Seriendatenblatt_BSM75GD120DLC1.xls ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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