BSM75GB170DN2 Infineon Technologies, BSM75GB170DN2 Datasheet
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Manufacturer Part Number
BSM75GB170DN2
Description
IGBT Modules N-CH 1.7KV 110A
Manufacturer
Infineon Technologies
Specifications of BSM75GB170DN2
Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.7kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1700 V
Continuous Collector Current At 25 C
110 A
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
34MM
Ic (max)
75.0 A
Vce(sat) (typ)
3.4 V
Technology
IGBT2 Standard
Housing
34 mm
Lead Free Status / RoHS Status
Compliant
Available stocks
Part Number:
BSM75GB170DN2
Part Number:
BSM75GB170DN2
Manufacturer:
INFINEON/英飞凌
Part Number:
BSM75GB170DN2
Part Number:
BSM75GB170DN2
BSM 75 GB 170 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
• R
Type
BSM 75 GB 170 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
G on,min
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
= 22 Ohm
p
= 1 ms
V
1700V 110A
CE
I
C
1
Package
HALF-BRIDGE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2702-A67
+ 150
± 20
1700
1700
4000
110
220
150
625
0.63
F
75
16
11
0.2
Oct-27-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec
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BSM75GB170DN2 Summary of contents
BSM 75 GB 170 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate • Ohm G on,min Type BSM 75 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage ...
BSM 75 GB 170 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...
BSM 75 GB 170 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 1200 Gon Rise time V = 1200 V, ...
BSM 75 GB 170 DN2 Power dissipation = ( tot C parameter: T 150 °C j 650 W 550 P 500 tot 450 400 350 300 250 200 150 100 Collector ...
BSM 75 GB 170 DN2 Typ. output characteristics parameter µ ° 150 A 130 17V 15V 120 I 13V C 11V 110 9V 100 7V ...
BSM 75 GB 170 DN2 Typ. gate charge = ( Gate parameter puls 800 0.0 0.2 0.4 Reverse ...
BSM 75 GB 170 DN2 Typ. switching time inductive load , T = 125° par 1200 ± ...
BSM 75 GB 170 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter 150 A 130 120 I F 110 100 0.0 ...
BSM 75 GB 170 DN2 Package Outlines Dimensions in mm Weight: 250 g Circuit Diagram 9 Oct-27-1997 ...
Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...
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