BSM50GAL120DN2 Infineon Technologies, BSM50GAL120DN2 Datasheet

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BSM50GAL120DN2

Manufacturer Part Number
BSM50GAL120DN2
Description
IGBT Modules 1200V 50A CHOPPER
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GAL120DN2.pdf (6 pages)

Specifications of BSM50GAL120DN2

Configuration
Single
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.5 V
Continuous Collector Current At 25 C
78 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge GAL 1
Ic (max)
50.0 A
Vce(sat) (typ)
2.5 V
Technology
IGBT2 Standard
Housing
34 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GAL120DN2
Manufacturer:
SIEMENS
Quantity:
25
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM50GAL120DN2
Quantity:
50
BSM 50 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
BSM 50 GAL 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Diode thermal resistance, chip-case,chopper
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
V
1200V 78A
= 1 ms
CE
I
C
1
Package
HALF BRIDGE GAL 1 C67076-A2010-A70
V
V
V
I
I
P
T
T
R
R
R
V
-
-
-
-
Symbol
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
THJCDC
Ordering Code
40 / 125 / 56
-40 ... + 125
Values
+ 150
± 20
1200
1200
2500
F
156
100
400
78
50
20
11
0.3
0.6
0.5
Nov-24-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM50GAL120DN2 Summary of contents

Page 1

BSM 50 GAL 120 DN2 IGBT Power Module • Single switch with chopper diode at collector • Including fast free-wheeling diodes • Package with insulated metal base plate Type BSM 50 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate ...

Page 2

BSM 50 GAL 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM 50 GAL 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...

Page 4

BSM 50 GAL 120 DN2 Electrical Characteristics Parameter Chopper Diode Chopper diode forward voltage ° ...

Page 5

BSM 50 GAL 120 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g 5 Nov-24-1997 ...

Page 6

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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