BSM35GB120DN2 Infineon Technologies, BSM35GB120DN2 Datasheet

IGBT Modules 1200V 35A DUAL

BSM35GB120DN2

Manufacturer Part Number
BSM35GB120DN2
Description
IGBT Modules 1200V 35A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM35GB120DN2.pdf (10 pages)

Specifications of BSM35GB120DN2

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
1.2kV
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
150C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
3.2 V
Continuous Collector Current At 25 C
50 A
Gate-emitter Leakage Current
150 nA
Power Dissipation
280 W
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
20 V
Mounting Style
Screw
Package / Case
Half Bridge1
Ic (max)
35.0 A
Vce(sat) (typ)
2.7 V
Technology
IGBT2 Standard
Housing
34 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM35GB120DN2
Manufacturer:
SIEMENS
Quantity:
25
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSM35GB120DN2
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM35GB120DN2
Quantity:
50
BSM 35 GB 120 DN2
IGBT Power Module
• Half-bridge
• Including fast free-wheeling diodes
• Doubled diode area
• Package with insulated metal base plate
Type
BSM 35 GB 120 DN2
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
R
Gate-emitter voltage
DC collector current
T
T
Pulsed collector current, t
T
T
Power dissipation per IGBT
T
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
C
C
C
C
C
GE
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
= 20 k
p
= 1 ms
V
1200V 50A
CE
I
C
1
Package
HALF-BRIDGE 1
V
V
I
I
P
T
T
R
R
V
-
-
-
-
Symbol
V
C
Cpuls
CE
CGR
GE
tot
j
stg
is
thJC
thJCD
40 / 125 / 56
-40 ... + 125
Values
Ordering Code
C67070-A2111-A70
+ 150
± 20
1200
1200
2500
100
280
0.44
F
50
35
70
20
11
0.8
Oct-21-1997
Unit
V
A
W
°C
K/W
Vac
mm
sec

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BSM35GB120DN2 Summary of contents

Page 1

BSM 35 GB 120 DN2 IGBT Power Module • Half-bridge • Including fast free-wheeling diodes • Doubled diode area • Package with insulated metal base plate Type BSM 35 GB 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage R ...

Page 2

BSM 35 GB 120 DN2 Electrical Characteristics Parameter Static Characteristics Gate threshold voltage 1 CE, C Collector-emitter saturation voltage °C ...

Page 3

BSM 35 GB 120 DN2 Electrical Characteristics Parameter Switching Characteristics, Inductive Load at T Turn-on delay time V = 600 Gon Rise time V = 600 V, ...

Page 4

BSM 35 GB 120 DN2 Power dissipation = ( tot C parameter: T 150 °C j 300 W 260 240 P tot 220 200 180 160 140 120 100 ...

Page 5

BSM 35 GB 120 DN2 Typ. output characteristics parameter µ ° 17V 15V I 55 13V C 11V ...

Page 6

BSM 35 GB 120 DN2 Typ. gate charge = ( Gate parameter puls 600 Reverse ...

Page 7

BSM 35 GB 120 DN2 Typ. switching time inductive load , T = 125° par 600 ± ...

Page 8

BSM 35 GB 120 DN2 Forward characteristics of fast recovery I = f(V ) reverse diode F F parameter =125° ...

Page 9

BSM 35 GB 120 DN2 Package Outlines Dimensions in mm Weight: 180 g Circuit Diagram 9 Oct-21-1997 ...

Page 10

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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