50MT060WH

Manufacturer Part Number50MT060WH
ManufacturerInternational Rectifier
50MT060WH datasheets

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Specifications of 50MT060WH

Channel TypeNConfigurationDual
Collector-emitter Voltage600VGate To Emitter Voltage (max)±20V
MountingScrewOperating Temperature (min)-40C
Operating Temperature (max)150COperating Temperature ClassificationAutomotive
Lead Free Status / RoHS StatusNot Compliant  
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"HALF-BRIDGE" IGBT MTP
Features
• Gen. 4 Warp Speed IGBT Technology
TM
• HEXFRED
Antiparallel Diodes with
UltraSoft Reverse Recovery
• Very Low Conduction and Switching Losses
• Optional SMT Thermistor (NTC)
• Aluminum Nitride DBC
• Very Low Stray Inductance Design for
High Speed Operation
UL E78996 approved
Benefits
• Optimized for Welding, UPS and SMPS
Applications
• Operating Frequencies > 20 kHz Hard
Switching,>200 kHz Resonant Mode
• Low EMI, requires Less Snubbing
• Direct Mounting to Heatsink
• PCB Solderable Terminals
• Very Low Junction-to-Case Thermal
Resistance
Absolute Maximum Ratings
Parameters
V
Collector-to-Emitter Voltage
CES
I
Continuos Collector Current
C
I
Pulsed Collector Current
CM
I
Peak Switching Current
LM
I
Diode Continuous Forward Current
F
I
Peak Diode Forward Current
FM
V
Gate-to-Emitter Voltage
GE
V
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
ISOL
P
Maximum Power Dissipation
D
www.irf.com
I27120 rev. D 02/03
50MT060WH
Warp Speed IGBT
V
CES
V
CE(on) typ.
V
= 15V, I
GE
T
MMTP
Max
600
@ T
= 25°C
114
C
@ T
= 109°C
50
C
350
350
@ T
= 109°C
34
C
200
± 20
2500
@ T
= 25°C
658
C
@ T
= 100°C
263
C
= 600V
= 2.3V @
= 50A
C
= 25°C
C
Units
V
A
V
W
1

50MT060WH Summary of contents

  • Page 1

    ... Diode Continuous Forward Current F I Peak Diode Forward Current FM V Gate-to-Emitter Voltage GE V RMS Isolation Voltage, Any Terminal to Case min ISOL P Maximum Power Dissipation D www.irf.com I27120 rev. D 02/03 50MT060WH Warp Speed IGBT V CES V CE(on) typ 15V MMTP Max 600 @ T = 25°C 114 ...

  • Page 2

    ... I27120 rev. D 02/03 Electrical Characteristics @ T Parameters V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th) I Collector-to-Emiter Leaking CES Current V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current GES Switching Characteristics @ T Parameters Q Total Gate Charge (turn-on Gate-Emitter Charge (turn-on) ...

  • Page 3

    ... Fig Typical Output Characteristics www.irf.com Min Typ IGBT, Diode - 40 Thermistor - IGBT Diode Module 0.06 5 (4) 3 ± 10% 120 100 Fig Maximum Collector Current vs. Case 50MT060WH I27120 rev. D 02/03 Max Units 150 °C 125 125 0.38 ° 100 125 T , Case Temperature (°C) C Temperature 150 3 ...

  • Page 4

    ... I27120 rev. D 02/ 100A 50A 20A 100 120 140 160 T , Junction Temperature (°C) J Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 100 10 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 4 20 Vcc = 400V 150˚ 125˚ 25˚ 0.4 0.8 1 ...

  • Page 5

    ... Vr = 200V 10 1 1000 100 /dt Fig Typical Reverse Recovery Current vs 200V I = 50A 125˚ 50A 25˚ /dt - (A/µs) f Fig Typical Stored Charge vs. di /dt f 50MT060WH I27120 rev. D 02/ 50A 125˚ 50A 25˚C F 1000 di /dt - (A/µs) f 1000 / ...

  • Page 6

    ... I27120 rev. D 02/03 Outline Table Note: unused terminals are not assembled in the package 6 Functional Diagram Electrical DHiagram Electrical Diagram Resistance in ohms Dimensions in millimetres www.irf.com ...

  • Page 7

    ... Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. Visit us at www.irf.com for sales contact information. 10/02 50MT060WH I27120 rev. D 02/03 = Thermistor TAC Fax: (310) 252-7309 ...