BSM150GB60DLC Infineon Technologies, BSM150GB60DLC Datasheet

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BSM150GB60DLC

Manufacturer Part Number
BSM150GB60DLC
Description
IGBT Modules 600V 150A DUAL
Manufacturer
Infineon Technologies
Datasheet
1.BSM150GB60DLC.pdf (9 pages)

Specifications of BSM150GB60DLC

Configuration
Dual
Channel Type
N
Collector-emitter Voltage
600V
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
1.95 V
Continuous Collector Current At 25 C
180 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
730 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
34MM
Ic (max)
150.0 A
Vce(sat) (typ)
1.95 V
Technology
IGBT2 Low Loss
Housing
34 mm
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
BSM150GB60DLC
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM150GB60DLC
Quantity:
50
Company:
H&T Electronics H&T Electronics
Part Number:
BSM150GB60DLC
Quantity:
320
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Andreas Vetter
approved by: Michael Hornkamp
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
f= 1MHz, T
f= 1MHz, T
V
V
V
date of publication: 2000-04-26
revision: 1
BSM 150 GB 60 DLC
P
P
C
C
C
c
c
c
R
CE
CE
CE
= 1ms, T
= 1ms
= 150A, V
= 150A, V
= 3,0mA, V
= 60°C
= 25°C
= 25°C, Transistor
= 0V, t
= 600V, V
= 600V, V
= 0V, V
p
= 10ms, T
c
GE
vj
vj
= 60°C
GE
GE
= 25°C, V
= 25°C, V
CE
= 20V, T
GE
GE
= 15V, T
= 15V, T
= V
= 0V, T
= 0V, T
GE
1 (8)
vj
, T
= 125°C
vj
CE
CE
vj
vj
= 25°C
vj
vj
vj
= 25°C
= 125°C
= 25°C
= 25V, V
= 25V, V
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
I
P
C
I
CRM
CE sat
GE(th)
FRM
CES
GES
GES
I
ISOL
CES
I
I
2
C
F
res
tot
ies
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
2.300
typ.
1,95
2,20
600
150
180
300
595
150
300
2,5
5,5
6,5
0,6
1
1
-
BSM 150 GB 60 DLC
max.
2,45
500
400
6,5
2000-02-08
-
-
-
-
A
mA
kV
nF
nF
µA
nA
W
V
A
A
A
V
A
A
V
V
V
2
s

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BSM150GB60DLC Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 300 250 Tvj = 25°C Tvj = 125°C 200 150 100 50 0 0,0 0,5 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 300 250 VGE = 8V VGE = 9V ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 300 250 200 150 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 300 250 200 150 100 50 0 0,0 0,2 ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical Eon Eoff 8 Erec Schaltverluste (typisch) Switching losses (typical Eon 8 Eoff Erec 7 ...

Page 7

Technische Information / Technical Information IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 1 0,1 0,01 0,001 0,001 i r [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i Sicherer Arbeitsbereich (RBSOA) Reverse ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram 1 2 BSM 150 GB 60 DLC (8) 2,8 x ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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