BSM50GD60DLC Infineon Technologies, BSM50GD60DLC Datasheet

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BSM50GD60DLC

Manufacturer Part Number
BSM50GD60DLC
Description
IGBT Modules 600V 50A 3-PHASE
Manufacturer
Infineon Technologies
Datasheet
1.BSM50GD60DLC.pdf (9 pages)

Specifications of BSM50GD60DLC

Configuration
Hex
Channel Type
N
Collector-emitter Voltage
600V
Collector Current (dc) (max)
70A
Gate To Emitter Voltage (max)
±20V
Mounting
Screw
Operating Temperature (min)
-40C
Operating Temperature (max)
125C
Operating Temperature Classification
Automotive
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.2 V
Continuous Collector Current At 25 C
70 A
Gate-emitter Leakage Current
400 nA
Power Dissipation
250 W
Maximum Operating Temperature
+ 125 C
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Package / Case
EconoPACK 2A
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GD60DLC
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM50GD60DLC
Quantity:
50
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GD60DLCE3224
Manufacturer:
APT
Quantity:
1 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
BSM50GD60DLCE3226
Manufacturer:
EUPEC/Infineon
Quantity:
1 000
Company:
HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED HONG KONG JIETUO ZIJING INTERNATIONAL TRADING CO., LIMITED
Part Number:
BSM50GD60DLCE3226
Quantity:
82
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
I
Isolations-Prüfspannung
insulation test voltage
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
prepared by: Andreas Vetter
approved by: Michael Hornkamp
IGBT-Module
IGBT-Modules
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Charakteristische Werte / Characteristic values
Transistor / Transistor
Technische Information / Technical Information
2
t - value, Diode
T
T
t
T
t
V
RMS, f= 50Hz, t= 1min.
I
I
I
f= 1MHz, T
f= 1MHz, T
V
V
V
date of publication: 2006-01-31
revision: 3
BSM 50 GD 60 DLC
P
P
C
C
C
C
C
C
R
CE
CE
CE
= 1ms, T
= 1ms
= 50A, V
= 50A, V
= 1mA, V
= 80°C
= 25°C
= 25°C, Transistor
= 0V, t
= 600V, V
= 600V, V
= 0V, V
p
= 10ms, T
GE
GE
C
CE
GE
vj
vj
= 80°C
= 25°C, V
= 25°C, V
= 15V, T
= 15V, T
= V
= 20V, T
GE
GE
= 0V, T
= 0V, T
GE
, T
1 (8)
Vj
vj
vj
vj
= 125°C
vj
CE
CE
= 25°C
= 125°C
= 25°C
= 25°C
vj
vj
= 25V, V
= 25V, V
= 25°C
= 125°C
GE
GE
= 0V
= 0V
V
V
I
V
V
V
C,nom.
I
I
C
I
P
C
I
CRM
CE sat
GE(th)
FRM
CES
GES
GES
I
ISOL
CES
I
I
2
C
F
res
tot
ies
t
min.
4,5
-
-
-
-
-
-
-
+/- 20V
typ.
1,95
2,20
600
100
250
100
760
2,5
5,5
2,2
0,2
50
70
50
1
1
-
BSM 50 GD 60 DLC
max.
2,45
500
400
6,5
-
-
-
-
A
mA
kV
nF
nF
µA
nA
W
V
A
A
A
V
A
A
V
V
V
2
s

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BSM50GD60DLC Summary of contents

Page 1

Technische Information / Technical Information IGBT-Module IGBT-Modules Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom ...

Page 2

Technische Information / Technical Information IGBT-Module IGBT-Modules Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) ...

Page 3

Technische Information / Technical Information IGBT-Module IGBT-Modules Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical ...

Page 4

Technische Information / Technical Information IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) 100 Tvj = 25°C 80 Tvj = 125° 0,0 0,5 Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 VGE = 8V 80 VGE = 9V VGE ...

Page 5

Technische Information / Technical Information IGBT-Module IGBT-Modules Übertragungscharakteristik (typisch) Transfer characteristic (typical) 100 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 0,0 0,2 BSM 50 ...

Page 6

Technische Information / Technical Information IGBT-Module IGBT-Modules Schaltverluste (typisch) Switching losses (typical) 2,5 Eon 2,0 Eoff Erec 1,5 1,0 0,5 0 Schaltverluste (typisch) Switching losses (typical) 2,5 2,0 1,5 1,0 0,5 0,0 0 BSM DLC ...

Page 7

Technische Information / Technical Information IGBT-Module IGBT-Modules Transienter Wärmewiderstand Transient thermal impedance 1 0,1 0,01 0,001 0, [K/kW] : IGBT i [sec] : IGBT i r [K/kW] : Diode i [sec] : Diode i Sicherer Arbeitsbereich (RBSOA) Reverse ...

Page 8

Technische Information / Technical Information IGBT-Module IGBT-Modules Gehäusemaße / Schaltbild Package outline / Circuit diagram BSM DLC 8 (8) BSM DLC ...

Page 9

Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschließlich für technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes für die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollständigkeit der bereitgestellten Produktdaten für diese Anwendung obliegt Ihnen bzw. ...

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