MMBT3904LT1XT Infineon Technologies, MMBT3904LT1XT Datasheet

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MMBT3904LT1XT

Manufacturer Part Number
MMBT3904LT1XT
Description
Manufacturer
Infineon Technologies
Datasheet

Specifications of MMBT3904LT1XT

Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage(max)
60V
Emitter-base Voltage (max)
6V
Collector Current (dc) (max)
200mA
Power Dissipation
330mW
Frequency (max)
300MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Compliant
NPN Silicon Switching Transistors
SMBT3904S/U
Type
SMBT3904/MMBT3904
SMBT3904S
SMBT3904U
1
Pb-containing package may be available upon special request
High DC current gain: 0.1 mA to 100 mA
Low collector-emitter saturation voltage
For SMBT3904S / SMBT3904U:
Complementary types: SMBT3906... MMBT3906
SMBT3904S / U: For orientation in reel
Pb-free (RoHS compliant) package
Qualified according AEC Q101
TR1
Two (galvanic) internal isolated transistors
with good matching in one package
see package information below
C1
E1
6
1
B2
B1
5
2
E2
C2
4
3
EHA07178
TR2
Marking
s1A
s1A
s1A
1)
1=B
1=E1
1=E1
2=E
2=B1
2=B1
1
Pin Configuration
3=C
3=C2
3=C2
-
4=E2
4=E2
SMBT3904...MMBT3904
-
5=B2
5=B2
-
6=C1
6=C1
Package
SOT23
SOT363
SC74
2007-09-20

Related parts for MMBT3904LT1XT

MMBT3904LT1XT Summary of contents

Page 1

NPN Silicon Switching Transistors High DC current gain: 0 100 mA Low collector-emitter saturation voltage For SMBT3904S / SMBT3904U: Two (galvanic) internal isolated transistors with good matching in one package Complementary types: SMBT3906... MMBT3906 SMBT3904S / U: For ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation- T 69° tbd° 115° 105°C S Junction temperature Storage temperature Thermal Resistance Parameter 1) Junction - soldering point SMBT3904/MMBT3904 SMBT3904S ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA Collector-base breakdown voltage µ Emitter-base breakdown voltage µ ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 5

Test circuits Delay and rise time 300 +10 -0.5 V <1.0 ns Storage and fall time 10 t < < 500 +10 -9.1 V <1.0 ns ...

Page 6

DC current gain normalized 125 - Collector-base capacitance C Emitter-base capacitance ...

Page 7

Total power dissipation P SMBT3904S 300 mW 250 225 200 175 150 125 100 Permissible Pulse Load totmax totDC p SMBT3904/MMBT3904 tot ...

Page 8

Permissible Pulse Load totmax totDC p SMBT3904S 0.005 0.01 0.02 0.05 0.1 0.2 0 Permissible ...

Page 9

Storage time stg 125 Rise time ...

Page 10

Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...

Page 11

Package Outline Foot Print Marking Layout (Example) Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0.25 B ...

Page 12

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 13

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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