MMBFJ210NL Fairchild Semiconductor, MMBFJ210NL Datasheet

MMBFJ210NL

Manufacturer Part Number

MMBFJ210NL

Description

Manufacturer

Fairchild Semiconductor

Datasheet

1.MMBFJ210NL.pdf (6 pages)

Specifications of MMBFJ210NL

Channel Type

Configuration

Single

Gate-source Voltage (max)

25V

Drain-gate Voltage (max)

25V

Operating Temperature (min)

-55C

Operating Temperature (max)

150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

SOT-23

Lead Free Status / RoHS Status

Compliant

Current page: 1 of 6
Download datasheet (200Kb)

1997 Fairchild Semiconductor Corporation

Symbol

N-Channel RF Amplifier

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

This device is designed for HF/VHF mixer/amplifier and

applications where Process 50 is not adequate. Sufficient

gain and low noise for sensitive receivers. Sourced from

Process 90.

Absolute Maximum Ratings*

Thermal Characteristics

Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

stg

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

Operating and Storage Junction Temperature Range

Total Device Dissipation

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

Derate above 25 C

J210

J211

J212

Characteristic

TO-92

Parameter

TA = 25°C unless otherwise noted

Mark: 62V / 62W / 62X

SOT-23

J210-212

350

125

357

MMBFJ210

MMBFJ211

MMBFJ212

2.8

*MMBFJ210-212

-55 to +150

Value

NOTE: Source & Drain

- 25

Max

are interchangeable

225

556

1.8

J210/J211/J212/MMBFJ210/J211/J212, Rev A

Units

mW/ C

Units

C/W

Related parts for MMBFJ210NL

MMBFJ210NL Summary of contents

Page 1

... Derate above 25 C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 1997 Fairchild Semiconductor Corporation MMBFJ210 MMBFJ211 MMBFJ212 G SOT-23 Mark: 62V / 62W / 62X TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Gate-Source Breakdown Voltage ( Gate Reverse Current Gate-Source Cutoff Voltage GS(off) ON CHARACTERISTICS ...

Page 3

Typical Characteristics Transfer Characteristics Leakage Current vs. Voltage Transconductance vs. Drain Current (continued) Transfer Characteristics Noise Voltage vs. Frequency N-Channel RF Amplifier (continued) Output Conductance vs. Drain Current 5 ...

Page 4

Typical Characteristics Common Source Characteristics Input Admittance Output Admittance (continued) Capacitance vs. Voltage Forward Transadmittance Reverse Transadmittance N-Channel RF Amplifier (continued) ...

Page 5

Common Gate Characteristics Input Admittance Output Admittance N-Channel RF Amplifier (continued) Forward Transadmittance Reverse Transadmittance 5 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...

Related keywords

MMBFJ210NL datasheet
MMBFJ210NL data sheet
MMBFJ210NL pdf datasheet
MMBFJ210NL component
MMBFJ210NL part
MMBFJ210NL distributor
MMBFJ210NL RoHS
MMBFJ210NL datasheet download