BF545B NXP Semiconductors, BF545B Datasheet

TRANSISTOR, JFET, N, RF, SOT-23

BF545B

Manufacturer Part Number
BF545B
Description
TRANSISTOR, JFET, N, RF, SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BF545B

Channel Type
N
Configuration
Single
Gate-source Voltage (max)
-30V
Drain-gate Voltage (max)
-30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Transistor Type
JFET
Breakdown Voltage Vbr
30V
Zero Gate Voltage Drain Current Idss
6mA To 15mA
Gate-source Cutoff Voltage Vgs(off) Max
7.5V
Power Dissipation Pd
250mW
Transistor Case
RoHS Compliant
Lead Free Status / RoHS Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BF545B
Manufacturer:
NXP
Quantity:
3 000
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel symmetrical silicon junction field-effect transistors in a SOT23 package.
Table 1:
Symbol Parameter
V
V
I
P
DSS
y
DS
GSoff
tot
fs
BF545A; BF545B; BF545C
N-channel silicon junction field-effect transistors
Rev. 03 — 5 August 2004
Low leakage level (typ. 500 fA)
High gain
Low cut-off voltage (max. 2.2 V for BF545A).
Impedance converters in e.g. electret microphones and infra-red detectors
VHF amplifiers in oscillators and mixers.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
drain-source voltage
gate-source cut-off
voltage
drain current
total power dissipation
forward transfer
admittance
Quick reference data
Conditions
I
V
T
V
D
amb
GS
GS
BF545A
BF545B
BF545C
= 1 A; V
= 0 V; V
= 0 V; V
25 C
DS
DS
DS
= 15 V
= 15 V
= 15 V
Min
-
2
6
12
-
3
Product data sheet
0.4
Typ
-
-
-
-
-
-
-
Max
6.5
15
25
250
6.5
30
7.8
Unit
V
V
mA
mA
mA
mW
mS

Related parts for BF545B

BF545B Summary of contents

Page 1

... BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Rev. 03 — 5 August 2004 1. Product profile 1.1 General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. ...

Page 2

... Marking Table 4: Type number BF545A BF545B BF545C [ made in Hong Kong made in Malaysia made in China. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Pinning Description source (s) drain (d) gate (g) Ordering information Package Name Description - plastic surface mounted package; 3 leads Marking Rev. 03 — ...

Page 3

... R th(j-a) [1] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead 10 mm 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Limiting values Parameter Conditions drain-source voltage (DC) gate-source voltage open drain ...

Page 4

... V gate-source cut-off voltage GSoff I drain current DSS I gate-source leakage current GSS y forward transfer admittance fs y common source output os admittance 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Conditions 200 BF545A BF545B BF545C ...

Page 5

... I DSS (mA Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Conditions MHz MHz 100 MHz f = 450 MHz ...

Page 6

... I D (mA BF545A ( ( Fig 6. Typical output characteristics. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors mbb465 300 R DSon ( ) 200 100 (V) GSoff V DS Fig 5. Drain-source on-resistance as a function of gate-source cut-off voltage; typical values. mbb462 (mA) (1) 4 (2) ...

Page 7

... Philips Semiconductors (mA BF545B ( ( Fig 8. Typical output characteristics. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors mbb460 (mA) (1) 12 (2) (3) 8 (4) ( (V) DS BF545B V DS Fig 9. Typical input characteristics. Rev. 03 — 5 August 2004 mbb459 ( © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 8

... Philips Semiconductors (mA BF545C ( ( Fig 10. Typical output characteristics. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors mbb457 (mA) (1) 20 (2) (3) 10 (4) (5) ( (V) DS BF545C V DS Fig 11. Typical input characteristics. Rev. 03 — 5 August 2004 mbb456 ( © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 9

... I (4) I Fig 15. Gate current as a function of drain-gate Rev. 03 — 5 August 2004 BF545B voltage; typical values. ( only for BF545B and BF545C mA mA 0.1 mA GSS voltage; typical values. © Koninklijke Philips Electronics N.V. 2004. All rights reserved. mbb458 0 (V) mbb454 (1) ( ...

Page 10

... DS GS Fig 16. Gate current as a function of junction temperature; typical values iss (pF Fig 18. Typical input capacitance. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors mbb453 C rss (pF) 100 150 Fig 17. Reverse transfer capacitance as a function of mbb451 y (mS (V) ...

Page 11

... amb ( ( Fig 20. Common-source forward transfer admittance; typical values mA amb ( ( Fig 22. Common-source output admittance; typical values. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors mbb469 y (mS (MHz (1) (2) Fig 21. Common-source reverse transfer admittance (mS Rev. 03 — 5 August 2004 ...

Page 12

... Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig 23. Package outline. 9397 750 13391 Product data sheet BF545A; BF545B; BF545C scale 3.0 1.4 2.5 1.9 0.95 2 ...

Page 13

... The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors • Marking code changed, see BF545A-B-C_2 19960729 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors Data sheet status Change notice Product data sheet - Table 4. ...

Page 14

... For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 13391 Product data sheet BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors [2] [3] Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specifi ...

Page 15

... Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 Disclaimers Contact information . . . . . . . . . . . . . . . . . . . . 14 BF545A; BF545B; BF545C N-channel silicon junction field-effect transistors © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice ...

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