SPA11N80C3XK Infineon Technologies, SPA11N80C3XK Datasheet
SPA11N80C3XK
Specifications of SPA11N80C3XK
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SPA11N80C3XK Summary of contents
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TM CoolMOS Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC • Pb-free lead plating; RoHS compliant • Ultra low gate charge • Ultra low effective ...
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Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous diode forward current 2) Diode pulse current 4) Reverse diode dv /dt Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wave ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy 5) related Effective output capacitance, time 6) related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge ...
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Power dissipation P =f(T ) tot C 160 140 120 100 [° Max. transient thermal impedance Z =f(t ) thJC P parameter: D ...
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Typ. output characteristics I =f =150 °C; t =10 µ parameter Drain-source on-state resistance R =f(T ); ...
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Typ. gate charge V =f =11 A pulsed GS gate D parameter gate 11 Avalanche energy =50 ...
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Typ. capacitances C =f MHz Ciss Coss 1 10 Crss 100 200 300 400 V DS Rev. 2.9 14 Typ. Coss stored ...
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Definition of diode switching characteristics Rev. 2.9 page 8 SPP11N80C3 2008-10-15 ...
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PG-TO220-3: Outline Dimensions in mm/inches Rev. 2.9 page 9 SPP11N80C3 2008-10-15 ...
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... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...