IRFR9210TR Vishay, IRFR9210TR Datasheet

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IRFR9210TR

Manufacturer Part Number
IRFR9210TR
Description
MOSFET P-CHANNEL 200V
Manufacturer
Vishay
Datasheets

Specifications of IRFR9210TR

Rohs Compliant
NO
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3 Ohm @ 1.1A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
1.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.9nC @ 10V
Input Capacitance (ciss) @ Vds
170pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
3 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1.9 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFR9210TRPBF
Manufacturer:
Vishay/Siliconix
Quantity:
35 377
Part Number:
IRFR9210TRPBF
Manufacturer:
Maxim
Quantity:
20
Company:
Part Number:
IRFR9210TRPBF
Quantity:
15 045
Company:
Part Number:
IRFR9210TRPBF
Quantity:
9 000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91281
S09-0060-Rev. A, 02-Feb-09
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
D
DS
DS(on)
g
gs
gd
DPAK
SD
DD
(Max.) (nC)
(nC)
(nC)
(V)
≤ - 1.9 A, dI/dt ≤ 70 A/µs, V
= - 50 V, starting T
(Ω)
G
S
D
(TO-251)
IPAK
a
J
G
= 25 °C, L = 124 mH, R
c
D S
DPAK (TO-252)
IRFR9210PbF
SiHFR9210-E3
IRFR9210
SiHFR9210
a
a
V
b
DD
GS
≤ V
= - 10 V
e
DS
G
, T
P-Channel MOSFET
e
Single
J
- 200
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
≤ 150 °C.
8.9
2.1
3.9
G
S
D
= 25 Ω, I
C
Power MOSFET
V
= 25 °C, unless otherwise noted
GS
3.0
DPAK (TO-252)
IRFR9210TRPbF
SiHFR9210T-E3
IRFR9210TR
SiHFR9210T
at - 10 V
AS
T
T
= - 1.9 A (see fig. 12).
for 10 s
C
A
= 25 °C
= 25 °C
T
T
a
a
C
C
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210, SiHFR9210)
• Straight Lead (IRFU9210, SiHFU9210)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Lead (Pb)-free Available
DESCRIPTION
The Power MOSFETs technology is the key to Vishay’s
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFET
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
a
a
SYMBOL
DPAK (TO-252)
-
-
IRFR9210TRL
SiHFR9210TL
T
dV/dt
J
V
V
E
E
I
I
P
, T
I
DM
AR
DS
GS
AS
AR
D
D
stg
a
a
- 55 to + 150
LIMIT
0.020
- 200
260
± 20
- 1.9
- 1.2
- 7.6
0.20
- 1.9
- 5.0
300
2.5
2.5
25
Vishay Siliconix
d
IPAK (TO-251)
IRFU9210PbF
SiHFU9210-E3
IRFU9210
SiHFU9210
www.vishay.com
UNIT
W/°C
V/ns
RoHS*
COMPLIANT
mJ
mJ
°C
W
V
A
A
Available
1

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