IRFR9220TR

Manufacturer Part NumberIRFR9220TR
Description-200V SINGLE P-CHANNEL HEXFET POWER MOSFET IN A D-PAK PACK
ManufacturerVishay
IRFR9220TR datasheets
 

Specifications of IRFR9220TR

Rohs CompliantNOFet TypeMOSFET P-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs1.5 Ohm @ 2.2A, 10V
Drain To Source Voltage (vdss)200VCurrent - Continuous Drain (id) @ 25° C3.6A
Vgs(th) (max) @ Id4V @ 250µAGate Charge (qg) @ Vgs20nC @ 10V
Input Capacitance (ciss) @ Vds340pF @ 25VPower - Max2.5W
Mounting TypeSurface MountPackage / CaseDPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS StatusContains lead / RoHS non-compliant  
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PRODUCT SUMMARY
V
(V)
DS
R
(Ω)
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9220PbF
Lead (Pb)-free
SiHFR9220-E3
IRFR9220
SnPb
SiHFR9220
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 50 V, Starting T
= 25 °C, L = 35 mH, R
DD
J
≤ - 3.9 A, dI/dt ≤ 95 A/µs, V
≤ V
c. I
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91283
S-82992-Rev. B, 12-Jan-09
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
- 200
• Repetitive Avalanche Rated
1.5
• Surface Mount (IRFR9220, SiHFR9220)
20
• Straight Lead (IRFUFU9220, SiHFU9220)
3.3
• Available in Tape and Reel
11
• P-Channel
Single
• Fast Switching
S
• Lead (Pb)-free Available
DESCRIPTION
G
Third Power MOSFETs technology is the key to Vishay
advanced line of Power MOSFET transistors. The efficient
geometry and unique processing of the Power MOSFETs
design achieve very low on-state resistance combined with
high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor
D
phase, infrared, or wave soldering techniques. The straight
P-Channel MOSFET
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
IIRFR9220TRLPbF
IRFR9220TRRPbF
a
SiHFR9220TL-E3
SiHFR9220TR-E3
a
IRFR9220TRL
IRFR9220TRR
a
SiHFR9220TL
SiHFR9220TR
= 25 °C, unless otherwise noted
C
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
e
T
= 25 °C
A
for 10 s
= 25 Ω, I
= - 3.6 A (see fig. 12).
G
AS
≤ 150 °C.
, T
J
Vishay Siliconix
DPAK (TO-252)
IPAK (TO-251)
a
a
IRFR9220TRPbF
IRFU9220PbF
a
a
SiHFR9220T-E3
SiHFU9220-E3
a
a
IRFR9220TR
IRFU9220
a
a
SiHFR9220T
SiHFU9220
SYMBOL
LIMIT
V
- 200
DS
V
± 20
GS
- 3.6
I
D
- 2.3
I
- 14
DM
0.33
0.020
E
310
AS
I
- 3.6
AR
E
4.2
AR
42
P
D
2.5
dV/dt
- 5.0
T
, T
- 55 to + 150
J
stg
d
260
www.vishay.com
Available
RoHS*
COMPLIANT
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
1