IXFH50N60P3 IXYS, IXFH50N60P3 Datasheet

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IXFH50N60P3

Manufacturer Part Number
IXFH50N60P3
Description
MOSFET N-CH 600V 50A TO247
Manufacturer
IXYS
Series
Polar3™ HiPerFET™r
Datasheet

Specifications of IXFH50N60P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
145 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
6300pF @ 25V
Power - Max
1040W
Mounting Type
*
Package / Case
*
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
50
Rds(on), Max, Tj=25°c, (?)
0.145
Ciss, Typ, (pf)
6300
Qg, Typ, (nc)
94
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1040
Rthjc, Max, (ºc/w)
0.12
Package Style
TO-247
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Polar3
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
sold
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
TO-268
TO-3P
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247 & TO-3P)
TO-247
V
V
V
V
V
Test Conditions
I
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiperFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 4mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
TM
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFQ50N60P3
IXFH50N60P3
IXFT50N60P3
600
Characteristic Values
Min.
3.0
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
1040
± 30
± 40
600
600
125
150
300
260
Typ.
4.0
5.5
6.0
50
25
35
1
±100
Max.
Nm/lb.in.
145 mΩ
5.0
25
2 mA
V/ns
μA
°C
°C
°C
°C
°C
nA
W
V
V
V
V
A
A
A
V
V
g
g
g
J
V
I
R
TO-268 (IXFT)
TO-3P (IXFQ)
TO-247 (IXFH)
G = Gate
S = Source
Features
Advantages
Applications
D25
Fast Intrinsic Rectifier
Avalanche Rated
Low R
Low Package Inductance
High Power Density
Easy to Mount
Space Savings
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
DS(on)
DSS
G
D
G
DS(ON)
S
D
= 600V
= 50A
≤ ≤ ≤ ≤ ≤
S
and Q
G
Tab = Drain
D
145mΩ Ω Ω Ω Ω
S
G
D
D
D
= Drain
(Tab)
(Tab)
(Tab)
DS100310(03/11)

Related parts for IXFH50N60P3

IXFH50N60P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 Maximum Ratings 600 = 1MΩ 600 GS ± 30 ± 125 ≤ 150° 1040 -55 ... +150 150 -55 ... +150 300 260 1. 4.0 5.5 6 ...

Page 2

... D D25 0.5 • DSS D D25 23 0.25 Characteristic Values Min. Typ 1.1 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 TO-3P Outline Max Ω 0.12 °C/W °C/W Max TO-247 Outline 200 A 1.4 V 250 μC Terminals Gate 3 - Source Dim ...

Page 3

... IXFT50N60P3 IXFQ50N60P3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 - Degrees Centigrade C IXFH50N60P3 = 25º 25A Value vs 50A 25A D 75 100 125 150 75 100 125 150 ...

Page 4

... IXFT50N60P3 IXFQ50N60P3 Fig. 8. Transconductance 120 100 Amperes D Fig. 10. Gate Charge 300V 25A 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area 1000 R Limit DS(on) 100 150º 25ºC C Single Pulse 1 10 100 V - Volts DS IXFH50N60P3 40ºC J 25ºC 125º 100 100µs 1ms 1,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.001 0.01 Pulse Width - Seconds IXFT50N60P3 IXFQ50N60P3 IXFH50N60P3 0.1 1 IXYS REF: F_50N60P3(W8)03-10-11 10 ...

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