IXFK64N60P3 IXYS, IXFK64N60P3 Datasheet

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IXFK64N60P3

Manufacturer Part Number
IXFK64N60P3
Description
MOSFET N-CH 600V 64A TO264
Manufacturer
IXYS
Series
Polar3™ HiPerFET™r
Datasheet

Specifications of IXFK64N60P3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
95 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
64A
Vgs(th) (max) @ Id
5V @ 4mA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
9900pF @ 25V
Power - Max
1130W
Mounting Type
*
Package / Case
*
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
64
Rds(on), Max, Tj=25°c, (?)
0.095
Ciss, Typ, (pf)
9900
Qg, Typ, (nc)
145
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
1130
Rthjc, Max, (ºc/w)
0.11
Package Style
TO-264
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Polar3
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
P
dV/dt
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2011 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
HiPerFET
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 0V, I
= V
= ± 30V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 1mA
≤ V
= 4mA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
(PLUS247)
, T
TM
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
Advance Technical Information
J
= 125°C
JM
IXFK64N60P3
IXFX64N60P3
20..120 /4.5..27
600
3.0
Min.
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
1.13/10
1130
± 30
± 40
Typ.
600
600
160
150
300
260
1.5
64
32
35
10
6
± 200
Nm/lb.in.
Max.
5.0
25
95 mΩ
3
N/lb.
V/ns
mA
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
g
J
V
I
R
t
TO-264 (IXFK)
PLUS247 (IXFX)
G = Gate
S = Source
Features
Advantages
Applications
D25
rr
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Diode
Low Q
Low R
Low Drain-to-Tab Capacitance
Low Package Inductance
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Easy to Mount
Space Savings
DS(on)
DSS
G
G
D
S
G
DS(on)
D
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
Tab = Drain
600V
64A
95mΩ Ω Ω Ω Ω
250ns
= Drain
Tab
Tab
DS100312(03/11)

Related parts for IXFK64N60P3

IXFK64N60P3 Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2011 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXFK64N60P3 IXFX64N60P3 Maximum Ratings 600 = 1MΩ 600 GS ± 30 ± 160 JM 32 1.5 1130 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1.13/10 20 ...

Page 2

... I = 0.5 • DSS D D25 35 0.15 Characteristic Values Min. Typ. JM 1.2 12.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFK64N60P3 IXFX64N60P3 TO-264 AA Outline Max Ω Dim. Millimeter Min. Max 4.82 5.13 A1 2.54 2. 2.00 2.10 b 1.12 1 ...

Page 3

... GS 7V 3.0 2.6 6V 2.2 1.8 1.4 5V 1.0 0 32A Value vs 125º 25º 100 120 140 IXFK64N60P3 IXFX64N60P3 Fig. 2. Extended Output Characteristics @ 10V Volts DS Fig Normalized to I DS(on) D Junction Temperature V = 10V GS -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature -50 ...

Page 4

... I - Amperes D Fig. 10. Gate Charge 300V 32A 10mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 100 150º 25ºC C Single Pulse 0.1 10 100 V - Volts DS IXFK64N60P3 IXFX64N60P3 40ºC J 25ºC 125º 100 120 140 160 100µs 1ms 1,000 ...

Page 5

... IXYS CORPORATION, All Rights Reserved Fig. 13. Maximum Transient Thermal Impedance Fig. 13. Maximum Transient Thermal Impedance AAAAA 0.01 0.1 Pulse Width - Seconds IXFK64N60P3 IXFX64N60P3 1 10 IXYS REF: F_64N60P3(K8)03-16-11 ...

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