MC100EP11DTR2G ON Semiconductor, MC100EP11DTR2G Datasheet - Page 6

• Manufacturer Part Number: MC100EP11DTR2G
• Description: IC BUFFER FANOUT 1:2 DIFF 8TSSOP
• Manufacturer: ON Semiconductor
• Series: 100EPr
• Type: Fanout Buffer (Distribution)r

Specifications of MC100EP11DTR2G

• Number Of Circuits: 1
• Ratio - Input:output: 1:2
• Differential - Input:output: Yes/Yes
• Input: ECL, PECL
• Output: ECL, PECL
• Frequency - Max: 3GHz
• Voltage - Supply: 3 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Frequency-max: 3GHz
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
18. Input and output parameters vary 1:1 with V
19. All loading with 50 W to V
20. V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
21. Measured using a 750 mV source, 50% duty cycle clock source. All loading with 50 W to V
22. Skew is measured between outputs under identical transitions. Duty cycle skew is defined only for differential operation when the delays
Table 9. 100EP DC CHARACTERISTICS, NECL
Table 10. AC CHARACTERISTICS
Symbol
Symbol
I
V
V
V
V
V
I
I
f
t
t
t
t
V
t
t
EE
IH
IL
max
PLH
PHL
SKEW
JITTER
r
f
OH
OL
IH
IL
IHCMR
INPP
input signal.
are measured from the cross point of the inputs to the cross point of the outputs.
IHCMR
,
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
min varies 1:1 with V
Negative Power Supply Current
Output HIGH Voltage (Note 19)
Output LOW Voltage (Note 19)
Input HIGH Voltage (Single−Ended)
Input LOW Voltage (Single−Ended)
Input HIGH Voltage Common Mode
Range (Differential Configuration)
(Note 20)
Input HIGH Current
Input LOW Current
Maximum Frequency (Figure 2)
Propagation Delay to Output Differential
Within Device Skew
Device−to−Device Skew
Random Clock Jitter (RMS) (Figure 2)
Input Voltage Swing Sensitivity
(Differential Configuration)
Output Rise/Fall Times
(20% − 80%) @ 1.0 GHz
Characteristic
Characteristic
CC
EE
− 2.0 V.
, V
IHCMR
Q0, Q1 (Note 22)
CLK to Q, Q
V
max varies 1:1 with V
CC
= 0 V; V
CC
Q, Q
.
D
D
EE
−1945 −1820 −1695 −1945 −1820 −1695 −1945 −1820 −1695
−1225
−1945
−1145
−150
Min
0.5
26
V
Min
V
140
150
= −3.0 V to −5.5 V or V
70
http://onsemi.com
CC
EE
= 0 V; V
+ 2.0
CC
−40°C
−1020
Typ
−40°C
35
. The V
Typ
200
800
120
> 3
0.2
10
6
EE
−1625 −1945
−895
−880
IHCMR
= −5.5 V to −3.0 V (Note 18)
Max
150
0.0
44
1200
Max
250
170
110
< 1
15
range is referenced to the most positive side of the differential
CC
−1225
−1145
−150
Min
0.5
26
Min
160
150
V
= 3.0 V to 5.5 V; V
80
EE
+ 2.0
−1020
25°C
Typ
25°C
35
Typ
220
800
130
> 3
0.2
15
CC
− 2.0 V.
−1625 −1945
−895
−880
Max
150
0.0
1200
44
Max
270
110
180
< 1
20
EE
= 0 V (Note 21)
−1145
−1225
−150
Min
0.5
26
Min
180
150
90
V
EE
+ 2.0
−1020
85°C
Typ
85°C
Typ
35
240
800
150
> 3
0.2
20
−1625
−895
−880
Max
1200
150
Max
0.0
46
300
120
200
< 1
25
Unit
GHz
Unit
mA
mV
mV
mV
mV
mA
mA
mV
V
ps
ps
ps
ps