MC100EL1648DG ON Semiconductor, MC100EL1648DG Datasheet - Page 9

no-image

MC100EL1648DG

Manufacturer Part Number
MC100EL1648DG
Description
IC OSC VOLT CONTROL LP 5V 8SOIC
Manufacturer
ON Semiconductor
Series
100ELr
Type
Voltage Controlled Oscillator (VCO)r
Datasheet

Specifications of MC100EL1648DG

Frequency
1.1GHz
Voltage - Supply
4.2 V ~ 5.5 V
Current - Supply
19mA
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Count
*
Operating Temperature (max)
85C
Operating Temperature (min)
-40C
Package Type
SOIC N
Pin Count
8
Mounting
Surface Mount
Supply Voltage
5 Volts
Product
VCO
Clock External Input
Yes
Supply Voltage Range
4.2V To 5.5V
Digital Ic Case Style
SOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Filter Terminals
SMD
Rohs Compliant
Yes
Family Type
100EL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MC100EL1648DGOS
Voltage Controlled Varactor Mode, allows the VCO to be
tuned across the full operating voltage of the power supply.
Deriving from Figure 6, the tank capacitor, C, is replaced
with a varactor diode whose capacitance changes with the
voltage applied, thus changing the resonant frequency at
which the VCO tank operates as shown in Figure 3, tank
option #1. The capacitive component in Equation 1 also
needs to include the input capacitance of the device and
other circuit and parasitic elements.
V
IN
The tank circuit configuration presented in Figure 11,
190
170
150
130
110
90
70
50
1 KW
Figure 11. Voltage Controlled Varactor Mode
0
*Use high impedance probe (>1.0 MegW must be used).
**The 1200 W resistor and the scope termination imped-
L = Micro Metal torroid #T20−22, 8 turns #30
C = MMBV609
8 pin (14 pin) lead package
Figure 12. Plot 1. Dual Varactor MMBV609,
ance constitute a 25:1 attenuator probe. Coax shall be
CT−070−50 or equivalent.
Enameled Copper wire (@ 40 nH)
Tank #1
V
EE
2
100 mF
C
V
V
8 (10)
IN
in
1 (12)
, INPUT VOLTAGE (V)
vs. Frequency
0.1 mF
L
0.01 mF
*
4
3 (1)
6 (7) 7 (8)
6
V
0.1 mF
CC
VOLTAGE CONTROLLED MODE
8
0.1 mF
2 (14)
5 (5)
4 (3)
0.1 mF
http://onsemi.com
**
F
OUT
10
9
mode with Tank Circuit #1 (Figure 3), it should be noted that
the cathode of the varactor diode (D), pin 8 (for 8 lead
package) or pin 10 (for 14 lead package) should be biased at
least 1.4 V above V
capacitance of the varactor diode (plus the input capacitance
of the device, about 6.0 pF typical) in the voltage controlled
mode is shown in Plot 1, Dual Varactor MMBV609 V
Frequency. Figure 6, Figure 7, and Figure 8 show the
accuracy of the measured frequency with the different
variable capacitance values. The 1.0 kW resistor in Figure 11
is used to protect the varactor diode during testing. It is not
necessary as long as the dc input voltage does not cause the
diode to become forward biased. The tuning range of the
oscillator in the voltage controlled mode may be calculated
as follows:
Where
Where
the device power supply pins. Capacitors on the AGC pin
and the input varactor trace should be used to bypass the
AGC point and the VCO input (varactor diode),
guaranteeing only dc levels at these points. For output
frequency operation between 1.0 MHz and 50 MHz, a 0.1 mF
capacitor is sufficient. At higher frequencies, smaller values
of capacitance should be used; at lower frequencies, larger
values of capacitance. At high frequencies, the value of
bypass capacitors depends directly on the physical layout of
the system. All bypassing should be as close to the package
pins as possible to minimize unwanted lead inductance.
Several different capacitors may be needed to bypass
various frequencies.
When operating the oscillator in the voltage controlled
Typical
Good RF and low−frequency bypassing is necessary on
C
C
f min +
D
S
transfer
= Shunt Capacitance (input plus external
= Varactor Capacitance as a function of bias
f max
f min
capacitance)
voltage
2p
EE
+
.
characteristics
L(C D (max) ) C S
C D (max) ) C S
C D (min) ) C S
1
employing
in
the
vs.

Related parts for MC100EL1648DG