CAT5112VI-10-T3 | |
|---|---|
| Manufacturer Part Number | CAT5112VI-10-T3 |
| Description | IC POT DIGITL 10K 32TAP 8SOIC |
| Manufacturer | ON Semiconductor |
| CAT5112VI-10-T3 datasheets |
|
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Specifications of CAT5112VI-10-T3 | |||
|---|---|---|---|
| Taps | 32 | Resistance (ohms) | 10K |
| Number Of Circuits | 1 | Temperature Coefficient | 300 ppm/°C Typical |
| Memory Type | Non-Volatile | Interface | Up/Down |
| Voltage - Supply | 2.5 V ~ 6 V | Operating Temperature | -40°C ~ 85°C |
| Mounting Type | Surface Mount | Package / Case | 8-SOIC (3.9mm Width) |
| Resistance In Ohms | 10K | Lead Free Status / RoHS Status | Lead free / RoHS Compliant |
| Other names | CAT5112VI-10-T3CT CAT5112VI-10-TE13CT CAT5112VI-10-TE13CT | ||
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Table 4. DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
POWER SUPPLY
V
Operating Voltage Range
CC
I
Supply Current (Increment)
CC1
I
Supply Current (Write)
CC2
I
(Note 4)
Supply Current (Standby)
SB1
LOGIC INPUTS
I
Input Leakage Current
IH
I
Input Leakage Current
IL
V
TTL High Level Input Voltage
IH1
V
TTL Low Level Input Voltage
IL1
V
CMOS High Level Input Voltage
IH2
V
CMOS Low Level Input Voltage
IL2
POTENTIOMETER CHARACTERISTICS
R
Potentiometer Resistance
POT
Pot. Resistance Tolerance
V
Voltage on R
pin
RH
H
V
Voltage on R
pin
RL
L
Resolution
INL
Integral Linearity Error
DNL
Differential Linearity Error
R
Buffer Output Resistance
OUT
I
Buffer Output Current
OUT
TC
TC of Pot Resistance
RPOT
TC
Ratiometric TC
RATIO
C
/C
/C
Potentiometer Capacitances
RH
RL
RW
fc
Frequency Response
V
Output Voltage Range
WB(SWING)
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Latch−up protection is provided for stresses up to 100 mA on address and data pins from −1 V to V
5. I
= source or sink
W
6. These parameters are periodically sampled and are not 100% tested.
(V
= +2.5 V to +6 V unless otherwise specified)
CC
Conditions
Min
2.5
V
= 6 V, f = 1 MHz, I
= 0
–
CC
W
V
= 6 V, f = 250 kHz, I
= 0
–
CC
W
Programming, V
= 6 V
–
CC
V
= 3 V
–
CC
CS = V
− 0.3 V
–
CC
U/D, INC = V
− 0.3 V or GND
CC
V
= V
–
IN
CC
V
= 0 V
–
IN
4.5 V ≤ V
≤ 5.5 V
2
CC
0
2.5 V ≤ V
≤ 6 V
V
x 0.7
CC
CC
−0.3
−10 Device
−50 Device
−00 Device
0
0
I
≤ 2 mA
W
I
≤ 2 mA
W
0.05 V
≤ V
≤ 0.95 V
,
CC
WB
CC
V
= 5 V
CC
0.05 V
≤ V
≤ 0.95 V
,
CC
WB
CC
V
= 5 V
CC
Passive Attenuator, 10 kW
I
≤ 100 mA, V
= 5 V
0.01 V
OUT
CC
http://onsemi.com
5
Typ
Max
Units
–
6
V
–
200
mA
–
100
mA
–
1000
mA
–
500
mA
75
150
mA
–
10
mA
–
−10
mA
–
V
V
CC
–
0.8
V
–
V
+ 0.3
V
CC
–
V
x 0.2
V
CC
10
kW
50
100
±20
%
V
V
CC
V
V
CC
1
%
0.5
1
LSB
0.25
0.5
LSB
1
W
3
mA
300
ppm/°C
20
ppm/°C
8/8/25
pF
1.7
MHz
0.99 V
CC
CC
+ 1 V
CC
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