MCP4332-503E/ST Microchip Technology, MCP4332-503E/ST Datasheet - Page 28

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MCP4332-503E/ST

Manufacturer Part Number
MCP4332-503E/ST
Description
IC DGTL POT QUAD 50K 14TSSOP
Manufacturer
Microchip Technology
Datasheet

Specifications of MCP4332-503E/ST

Taps
129
Resistance (ohms)
50K
Number Of Circuits
4
Temperature Coefficient
150 ppm/°C Typical
Memory Type
Volatile
Interface
SPI Serial
Voltage - Supply
1.8 V ~ 5.5 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
14-TSSOP
Resistance In Ohms
50K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MCP433X/435X
Note: Unless otherwise indicated, T
= +25°C, V
A
7.00%
-40C
6.00%
+85C
5.00%
4.00%
3.00%
2.00%
1.00%
0.00%
-1.00%
0
32
64
96
128
160
Wiper Code
FIGURE 2-56:
50 k
– Worst Case R
from Average R
(R
-R
) Error (%) vs.
BW
BW0
BW3
Wiper Setting and Temperature
(V
= 5.5V, I
= 90 µA).
DD
W
4.00%
-40C
3.00%
+85C
2.00%
1.00%
0.00%
-1.00%
-2.00%
0
32
64
96
128
160
Wiper Code
FIGURE 2-57:
50 k
– Worst Case R
from Average R
(R
-R
) Error (%) vs.
BW
BW0
BW3
Wiper Setting and Temperature
(V
= 3.0V, I
= 48 µA).
DD
W
3.50%
-40C
+85C
2.50%
1.50%
0.50%
-0.50%
-1.50%
0
32
64
96
128
160
Wiper Code
Note:
See Appendix B: for additional infor-
mation of R
resistance variation char-
W
acteristics for V
> 2.7V.
DD
FIGURE 2-58:
50 k
– Worst Case R
from Average R
(R
-R
) Error (%) vs.
BW
BW0
BW3
Wiper Setting and Temperature
(V
= 1.8V, I
= 30 µA).
DD
W
DS22242A-page 28
= 5V, V
= 0V.
DD
SS
7
+25C
6
+125C
5
4
3
2
1
0
-1
CH0
CH2
-2
-3
0
32
192
224
256
FIGURE 2-59:
BW
Wiper Setting. (R
)/R
-40°C)
BW(code = 256, 25°C)
(V
= 5.5V, I
DD
12
+25C
10
+125C
8
6
4
2
CH0
0
CH2
-2
0
32
192
224
256
FIGURE 2-60:
BW
Wiper Setting. (R
)/R
-40°C)
BW(code = 256, 25°C)
(V
= 3.0V, I
DD
200
+25C
0
+125C
-200
-400
-600
-800
-1000
-1200
-1400
0
192
224
256
Note:
See Appendix B: for additional infor-
mation of R
acteristics for V
FIGURE 2-61:
BW
Wiper Setting. (R
)/R
-40°C)
BW(code = 256, 25°C)
(V
= 1.8V, I
DD
CH1
CH3
64
96
128
160
192
224
256
Wiper Code
50 k
– R
PPM/°C vs.
WB
-R
BW(code=n, 125°C)
BW(code=n,
/165°C * 1,000,000)
= 90 µA).
W
CH1
CH3
64
96
128
160
192
224
256
Wiper Code
50 k
– R
PPM/°C vs.
WB
-R
BW(code=n, 125°C)
BW(code=n,
/165°C * 1,000,000)
= 48 µA).
W
CH0
CH1
CH2
CH3
32
64
96
128 160 192 224 256
Wiper Code
resistance variation char-
W
> 2.7V.
DD
50 k
– R
PPM/°C vs.
WB
-R
BW(code=n, 125°C)
BW(code=n,
/165°C * 1,000,000)
= 30 µA).
W
 2010 Microchip Technology Inc.

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