MCP4332-503E/ST

Manufacturer Part NumberMCP4332-503E/ST
DescriptionIC DGTL POT QUAD 50K 14TSSOP
ManufacturerMicrochip Technology
MCP4332-503E/ST datasheet
 


Specifications of MCP4332-503E/ST

Taps129Resistance (ohms)50K
Number Of Circuits4Temperature Coefficient150 ppm/°C Typical
Memory TypeVolatileInterfaceSPI Serial
Voltage - Supply1.8 V ~ 5.5 VOperating Temperature-40°C ~ 125°C
Mounting TypeSurface MountPackage / Case14-TSSOP
Resistance In Ohms50KLead Free Status / RoHS StatusLead free / RoHS Compliant
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MCP433X/435X
Note: Unless otherwise indicated, T
= +25°C, V
A
14.00%
-40C
13.00%
12.00%
+85C
11.00%
10.00%
9.00%
8.00%
7.00%
6.00%
5.00%
4.00%
3.00%
2.00%
1.00%
0.00%
-1.00%
0
32
64
96
128
160
Wiper Code
FIGURE 2-76:
100 k
– Worst Case R
from Average R
(R
-R
) Error (%) vs.
BW
BW0
BW3
Wiper Setting and Temperature
(V
= 5.5V, I
= 45 µA).
DD
W
7.00%
-40C
6.00%
+85C
5.00%
4.00%
3.00%
2.00%
1.00%
0.00%
-1.00%
0
32
64
96
128
160
Wiper Code
FIGURE 2-77:
100 k
– Worst Case R
from Average R
(R
-R
) Error (%) vs.
BW
BW0
BW3
Wiper Setting and Temperature
(V
= 3.0V, I
= 24 µA).
DD
W
6.00%
-40C
5.00%
+85C
4.00%
3.00%
2.00%
1.00%
0.00%
-1.00%
0
32
64
96
128
160
Wiper Code
Note:
See Appendix B: for additional infor-
mation of R
resistance variation char-
W
acteristics for V
> 2.7V.
DD
FIGURE 2-78:
100 k
– Worst Case R
from Average R
(R
-R
) Error (%) vs.
BW
BW0
BW3
Wiper Setting and Temperature
(V
= 1.8V, I
= 15 µA).
DD
W
DS22242A-page 32
= 5V, V
= 0V.
DD
SS
16
+25C
14
+125C
12
10
8
6
4
2
0
0
32
192
224
256
FIGURE 2-79:
BW
Wiper Setting. (R
)/R
-40°C)
BW(code = 256, 25°C)
(V
= 5.5V, I
DD
18
+25C
16
+125C
14
12
10
8
6
4
2
0
0
32
192
224
256
FIGURE 2-80:
BW
Wiper Setting. (R
)/R
-40°C)
BW(code = 256, 25°C)
(V
= 3.0V, I
DD
200
+25C
0
+125C
-200
-400
-600
-800
-1000
-1200
0
192
224
256
Note:
See Appendix B: for additional infor-
mation of R
acteristics for V
FIGURE 2-81:
BW
Wiper Setting. (R
)/R
-40°C)
BW(code = 256, 25°C)
(V
= 1.8V, I
DD
CH0
CH1
CH2
CH3
64
96
128
160
192
224
256
Wiper Code
100 k
– R
PPM/°C vs.
WB
-R
BW(code=n, 125°C)
BW(code=n,
/165°C * 1,000,000)
= 45 µA).
W
CH0
CH1
CH2
CH3
64
96
128
160
192
224
256
Wiper Code
100 k
– R
PPM/°C vs.
WB
-R
BW(code=n, 125°C)
BW(code=n,
/165°C * 1,000,000)
= 24 µA).
W
CH0
CH1
CH2
CH3
32
64
96
128 160 192 224 256
Wiper Code
resistance variation char-
W
> 2.7V.
DD
100 k
– R
PPM/°C vs.
WB
-R
BW(code=n, 125°C)
BW(code=n,
/165°C * 1,000,000)
= 15 µA).
W
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