MCP4351-103E/ST

Manufacturer Part NumberMCP4351-103E/ST
DescriptionIC DGTL POT QUAD 10K 20TSSOP
ManufacturerMicrochip Technology
MCP4351-103E/ST datasheet
 

Specifications of MCP4351-103E/ST

Taps257Resistance (ohms)10K
Number Of Circuits4Temperature Coefficient150 ppm/°C Typical
Memory TypeVolatileInterfaceSPI Serial
Voltage - Supply1.8 V ~ 5.5 VOperating Temperature-40°C ~ 125°C
Mounting TypeSurface MountPackage / Case20-TSSOP
Resistance In Ohms10KLead Free Status / RoHS StatusLead free / RoHS Compliant
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
Page 81
82
Page 82
83
Page 83
84
Page 84
85
Page 85
86
Page 86
87
Page 87
88
Page 88
Page 82/88

Download datasheet (6Mb)Embed
PrevNext
MCP433X/435X
Using the simulation models of the NMOS and PMOS
devices for the MCP43XX analog switch
we plot the device resistance when the devices are
turned on.
Figure B-11
and
Figure B-12
resistances of the NMOS and PMOS devices as the
V
voltage is increased. The wiper resistance (R
IN
simply the parallel resistance on the NMOS and PMOS
devices (R
= R
|| R
). Below the threshold
W
NMOS
PMOS
voltage for the NMOS ad PMOS devices, the
resistance becomes very large (Giga s). In the
transistors active region, the resistance is much lower.
For these graphs, the resistances are on different
scales.
Figure B-13
and
Figure B-14
NMOS and PMOS device resistance for their active
region and the resulting wiper resistance. For these
graphs, all resistances are on the same scale.
R
W
V
(V
G
“gate”
NMOS
V
IN
PMOS
“gate”
FIGURE B-10:
Analog Switch.
3.00E+10
R
R
W
NMOS
2.50E+10
R
PMOS
2.00E+10
1.50E+10
1.00E+10
NMOS
PMOS
5.00E+09
Theshold
Theshold
0.00E+00
0.0
0.3
0.6
0.9
1.2
V
Voltage
IN
FIGURE B-11:
NMOS and PMOS
Transistor Resistance (R
, R
NMOS
PMOS
Wiper Resistance (R
) VS. V
W
IN
(V
= 3.0V).
DD
DS22242A-page 82
(Figure
B-10),
7.00E+09
6.00E+09
show the
5.00E+09
) is
W
4.00E+09
3.00E+09
2.00E+09
1.00E+09
0.00E+00
only plots the
FIGURE B-12:
Transistor Resistance (R
Wiper Resistance (R
(V
= 1.8V).
DD
/V
)
DD
SS
300
250
V
OUT
200
150
100
50
2500
0
0.0
2000
FIGURE B-13:
1500
Transistor Resistance (R
1000
Wiper Resistance (R
(V
= 3.0V).
DD
500
0
5000
1.5
1.8
4500
4000
3500
) and
3000
2500
2000
1500
1000
500
0
0.0
FIGURE B-14:
Transistor Resistance (R
Wiper Resistance (R
(V
= 1.8V).
DD
160
R
NMOS
140
R
R
PMOS
W
120
100
80
NMOS
60
Theshold
PMOS
Theshold
40
20
0
0.0
0.6
1.2
1.8
2.4
3.0
V
Voltage
IN
NMOS and PMOS
, R
) and
NMOS
PMOS
) VS. V
W
IN
R
R
NMOS
PMOS
R
W
0.6
1.2
1.8
2.4
3.0
V
Voltage
IN
NMOS and PMOS
, R
) and
NMOS
PMOS
) VS. V
W
IN
R
R
NMOS
PMOS
R
W
0.3
0.6
0.9
1.2
1.5
1.8
V
Voltage
IN
NMOS and PMOS
, R
) and
NMOS
PMOS
) VS. V
W
IN
 2010 Microchip Technology Inc.