M36L0T7050B2ZAQF Micron Technology Inc, M36L0T7050B2ZAQF Datasheet

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M36L0T7050B2ZAQF

Manufacturer Part Number
M36L0T7050B2ZAQF
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M36L0T7050B2ZAQF

Operating Supply Voltage (max)
3.1V
Operating Temperature (max)
85C
Mounting
Surface Mount
Lead Free Status / Rohs Status
Compliant
Feature summary
Flash memory
November 2007
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
Multi-Chip Package
– 1 die of 128 Mbit (8Mb x16, Multiple Bank,
– 1 die of 32 Mbit (2Mb x16) Pseudo SRAM
Supply voltage
– V
– V
– V
Electronic signature
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration)
– Device Code (Bottom Flash Configuration)
ECOPACK® packages available
Synchronous / Asynchronous Read
– Synchronous Burst Read mode: 52MHz
– Random Access: 85ns
Synchronous Burst Read Suspend
Programming time
– 2.5µs typical Word program time using
Memory organization
– Multiple Bank Memory Array: 8 Mbit Banks
– Parameter Blocks (Top or Bottom location)
Dual operations
– program/erase in one Bank while read in
– No delay between read and write
Multi-level, Burst) Flash Memory
M36L0T7050T2: 88C4h
M36L0T7050B2: 88C5h
Buffer Enhanced Factory Program
command
others
operations
DDF
CCP
PPF
= 9V for fast program
= 1.7 to 1.95V
= V
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory
DDQ
= 2.7 to 3.1V
and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
Rev 0.2
PSRAM
Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
– WP for Block Lock-Down
– Absolute Write Protection with V
Security
– 64 bit unique device number
– 2112 bit user programmable OTP Cells
Common Flash Interface (CFI)
100,000 program/erase cycles per block
Access time: 65ns
8-Word Page Access capability: 18ns
Low standby current: 100µA
Deep power down current: 10µA
Compatible with standard LPSRAM
Power-down modes
– Deep Power-Down
– 4 Mbit Partial Array Refresh
– 8 Mbit Partial Array Refresh
with zero latency
M36L0T7050B2
TFBGA88 (ZAQ)
M36L0T7050T2
8 x 10mm
FBGA
Preliminary Data
www.numonyx.com
PP
= V
SS
1/22
1

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M36L0T7050B2ZAQF Summary of contents

Page 1

Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package Feature summary ■ Multi-Chip Package – 1 die of 128 Mbit (8Mb x16, Multiple Bank, Multi-level, Burst) Flash Memory – 1 die of 32 ...

Page 2

Contents Contents 1 Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

M36L0T7050T2, M36L0T7050B2 7 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of tables List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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M36L0T7050T2, M36L0T7050B2 List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

Summary description 1 Summary description The M36L0T7050T2 and M36L0T7050B2 combine two memory devices in a Multi-Chip Package: ● a 128-Mbit, Multiple Bank, Multi-Level, Burst, Flash memory, the M58LT128HT or M58LT128HB ● a 32-Mbit PseudoSRAM, the M69KW048BD. The purpose of this ...

Page 7

M36L0T7050T2, M36L0T7050B2 Table 1. Signal names (1) A0-A22 DQ0-DQ15 V DDF V DDQ V PPF CCP NC DU Flash memory signals WAIT F ...

Page 8

Summary description Figure 2. TFBGA Connections (Top view through package 8/22 2 ...

Page 9

M36L0T7050T2, M36L0T7050B2 2 Signal descriptions See Figure 1: Logic diagram connected to this device. 2.1 Address Inputs (A0-A22) Addresses A0-A20 are common inputs for the Flash memory and the PSRAM components. The other lines (A21-A22) are inputs for the Flash ...

Page 10

Signal descriptions 2.6 Flash Write Protect (WP Write Protect is an input that gives an additional hardware protection for each block. When Write Protect is Low, V Down blocks cannot be changed. When Write Protect is at High, V and ...

Page 11

M36L0T7050T2, M36L0T7050B2 2.12 PSRAM Chip Enable Input (E2 The Chip Enable, E2 This is the lowest power mode. 2.13 PSRAM Write Enable (W The Write Enable, W 2.14 PSRAM Output Enable (G The Output Enable, G cycles to be achieved ...

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Signal descriptions 2.20 V Program Supply Voltage PPF V is both a Flash control input and a Flash power supply pin. The two functions are PPF selected by the voltage range applied to the pin kept in ...

Page 13

M36L0T7050T2, M36L0T7050B2 3 Functional description The PSRAM and Flash memory components have separate power supplies but share the same grounds. They are distinguished by three Chip Enable inputs: E memory and E1 P Recommended operating conditions do not allow more ...

Page 14

Functional description Table 2. Operating modes G W Operation Flash Read Flash Write Flash Address Latch Flash Output V V ...

Page 15

M36L0T7050T2, M36L0T7050B2 4 Maximum rating Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other ...

Page 16

DC and AC parameters 5 DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics Tables that follow, are derived from tests ...

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M36L0T7050T2, M36L0T7050B2 Figure 5. AC measurement load circuit Table 5. Device Capacitance Symbol C Input Capacitance IN C Output Capacitance OUT 1. Sampled only, not 100% tested. Please refer to the M58LT128HTB and M69KW048BD datasheets for further DC and AC ...

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Package mechanical 6 Package mechanical In order to meet environmental requirements, Numonyx offers these devices in ECOPACK® packages. These packages have a Lead-free second-level interconnect. The category of Second-Level Interconnect is marked on the package and on the inner box ...

Page 19

M36L0T7050T2, M36L0T7050B2 Table 6. Stacked TFBGA88 8x10mm - 8x10 active ball array, 0.8mm pitch, Package Data Symbol ddd E 10.000 FE1 SD SE millimeters Typ Min Max 1.200 0.200 ...

Page 20

Part numbering 7 Part numbering Table 7. Ordering information scheme Example: Device Type M36 = Multi-Chip Package (Flash + RAM) Flash 1 Architecture L = Multilevel, Multiple Bank, Burst mode Flash 2 Architecture Die Operating Voltage T ...

Page 21

M36L0T7050T2, M36L0T7050B2 8 Revision history Table 8. Document revision history Date 04-May-2006 13-Nov-2007 Revision 01 Initial release. 02 Applied Numonyx branding. Revision history Changes 21/22 ...

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INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE ...

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