MT16HTF25664HY-800G1 Micron Technology Inc, MT16HTF25664HY-800G1 Datasheet

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MT16HTF25664HY-800G1

Manufacturer Part Number
MT16HTF25664HY-800G1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT16HTF25664HY-800G1

Main Category
DRAM Module
Sub-category
DDR2 SDRAM
Module Type
200SODIMM
Device Core Size
64b
Organization
256Mx64
Total Density
2GByte
Chip Density
1Gb
Access Time (max)
40ps
Maximum Clock Rate
800MHz
Operating Supply Voltage (typ)
1.8V
Operating Current
1.336A
Number Of Elements
16
Operating Supply Voltage (max)
1.9V
Operating Supply Voltage (min)
1.7V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
200
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
DDR2 SDRAM SODIMM
MT16HTF12864HY – 1GB
MT16HTF25664HY – 2GB
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2-3200, PC2-4200,
• 1GB (128 Meg x 64) or 2GB (256 Meg x 64)
• V
• V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Multiple internal device banks for concurrent opera-
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1
• Programmable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Serial presence detect (SPD) with EEPROM
• Gold edge contacts
• Dual rank
Table 1: Key Timing Parameters
PDF: 09005aef818e4054
htf16c128_256x64h.pdf - Rev. D 3/10 EN
(SODIMM)
PC2-5300, or PC2-6400
tion
Speed
Grade
DD
DDSPD
-80E
-800
-667
-53E
-40E
= V
DDQ
= 1.7–3.6V
1.8V
Products and specifications discussed herein are subject to change by Micron without notice.
Nomenclature
Industry
PC2-6400
PC2-6400
PC2-5300
PC2-4200
PC2-3200
t
CK
CL = 6
800
800
1GB, 2GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM
CL = 5
Data Rate (MT/s)
800
667
667
1
Figure 1: 200-Pin SODIMM (MO-224 R/C E)
Module height: 30mm (1.18in)
CL = 4
Options
• Operating temperature
• Package
• Frequency/CL
533
533
553
553
400
Notes:
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (lead-free)
– 2.5ns @ CL = 5 (DDR2-800)
– 2.5ns @ CL = 6 (DDR2-800)
– 3ns @ CL = 5 (DDR2-667)
– 3.75ns @ CL = 4 (DDR2-533)
– 5.0ns @ CL = 3 (DDR2-400)
Micron Technology, Inc. reserves the right to change products or specifications without notice.
1. Contact Micron for industrial temperature
2. CL = CAS (READ) latency.
3. Not recommended for new designs.
CL = 3
400
400
400
400
400
module offerings.
2
t
(ns)
12.5
RCD
15
15
15
15
A
A
≤ +85°C)
≤ +70°C)
© 2004 Micron Technology, Inc. All rights reserved.
3
1
(ns)
12.5
t
15
15
15
15
RP
Features
Marking
None
-80E
-53E
-40E
-800
-667
(ns)
t
55
55
55
55
55
Y
RC
I

Related parts for MT16HTF25664HY-800G1

MT16HTF25664HY-800G1 Summary of contents

Page 1

... DDR2 SDRAM SODIMM MT16HTF12864HY – 1GB MT16HTF25664HY – 2GB Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 • 1GB (128 Meg x 64) or 2GB (256 Meg x 64) • 1.8V DD DDQ • 1.7–3.6V DDSPD • ...

Page 2

... Table 2: Addressing Parameter Refresh count Row address Device bank address Device configuration Column address Module rank address Table 3: Part Numbers and Timing Parameters – 1GB Modules 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module 2 Part Number Density MT16HTF12864H(I)Y-80E__ MT16HTF12864H(I)Y-800__ MT16HTF12864H(I)Y-667__ MT16HTF12864H(I)Y-53E__ MT16HTF12864H(I)Y-40E__ Table 4: Part Numbers and Timing Parameters – ...

Page 3

Pin Assignments Table 5: Pin Assignments 200-Pin DDR2 SODIMM Front Pin Symbol Pin Symbol Pin DQS2 101 REF 103 DQ0 55 DQ18 105 7 DQ1 57 DQ19 107 9 V ...

Page 4

... Pin Descriptions The pin description table below is a comprehensive list of all possible pins for all DDR2 modules. All pins listed may not be supported on this module. See Pin Assignments for information specific to this module. Table 6: Pin Descriptions Symbol Type Ax Input BAx Input ...

Page 5

... SPD EEPROM power supply: 1.7–3.6V. Reference voltage: V /2. DD Ground. No connect: These pins are not connected on the module. No function: These pins are connected within the module, but provide no functionality. Not used: These pins are not used in specific module configurations/operations. Reserved for future use. 5 Pin Descriptions and V ...

Page 6

Functional Block Diagram Figure 2: Functional Block Diagram S1# S0# DQS0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1# DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2# DQS2 DM2 DQ16 DQ17 DQ18 DQ19 DQ20 ...

Page 7

... DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data trans- fers at the I/O pins. DDR2 modules use two sets of differential signals: DQS, DQS# to capture data and CK and CK# to capture commands, addresses, and control signals. Differential clocks and data strobes ensure exceptional noise immunity for these signals and provide precise crossing points to capture input signals ...

Page 8

... Electrical Specifications Stresses greater than those listed may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other condi- tions outside those indicated in the device data sheet are not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability. ...

Page 9

... Component specifications are available on Micron's Web site. Module speed grades cor- relate with component speed grades. Table 8: Module and Component Speed Grades DDR2 components may exceed the listed module speed grades; module may not be available in all listed speed grades Module Speed Grade -1GA ...

Page 10

I Specifications DD Table 9: DDR2 I Specifications and Conditions – 1GB DD Values shown for MT47H64M8 DDR2 SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) component data sheet Parameter Operating one bank ...

Page 11

... DD HIGH HIGH between valid commands; Address bus inputs are stable during deselects; Data bus inputs are switching 1. Value calculated as one module rank in this operating condition; all other module ranks Notes: 2. Value calculated reflects all module ranks in this operating condition. PDF: 09005aef818e4054 htf16c128_256x64h ...

Page 12

Table 10: DDR2 I Specifications and Conditions – 2GB DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating one bank active-precharge current: ...

Page 13

Table 10: DDR2 I Specifications and Conditions – 2GB (Continued) DD Values shown for MT47H128M8 DDR2 SDRAM only and are computed from values specified in the 1Gb (128 Meg x 8) com- ponent data sheet Parameter Operating bank interleave read ...

Page 14

Serial Presence-Detect For the latest SPD data, refer to Micron's SPD page: www.micron.com/SPD. Table 11: SPD EEPROM Operating Conditions Parameter/Condition Supply voltage Input high voltage: logic 1; All inputs Input low voltage: logic 0; All inputs Output low voltage: I ...

Page 15

... TYP 63.60 (2.504) TYP Back view U12 U13 U16 U17 4.2 (0.165) TYP 47.4 (1.87) TYP additional design dimensions. times occur. 15 Module Dimensions U5 30.15 (1.187) 29.85 (1.175) U9 20.0 (0.787) TYP Pin 199 0.60 (0.024) TYP U14 U18 Pin 2 11.4 (0.45) TYP Micron Technology, Inc. reserves the right to change products or specifications without notice. © ...

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