MT9VDDT6472HIY-335F2 Micron Technology Inc, MT9VDDT6472HIY-335F2 Datasheet

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MT9VDDT6472HIY-335F2

Manufacturer Part Number
MT9VDDT6472HIY-335F2
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT9VDDT6472HIY-335F2

Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
200SODIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.575A
Number Of Elements
9
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
-40C to 85C
Operating Temperature Classification
Industrial
Pin Count
200
Mounting
Socket
Lead Free Status / Rohs Status
Compliant
DDR SDRAM SODIMM
MT9VDDT1672H – 128MB
MT9VDDT3272H – 256MB
MT9VDDT6472H – 512MB
For component data sheets, refer to Micron’s Web site:
Features
• 200-pin, small-outline dual in-line memory module
• Fast data transfer rates: PC2100, PC2700, or PC3200
• 128MB (16 Meg x 72), 256MB (32 Meg x 72), and
• Supports ECC error detection and correction
• V
• V
• 2.5V I/O (SSTL_2-compatible)
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs (CK and CK#)
• Multiple internal device banks for concurrent
• Selectable burst lengths (BL) 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes: 15.625µs
• Serial presence-detect (SPD) with EEPROM
• Selectable CAS latency (CL) for maximum
• Single rank
• Gold edge contacts
200-Pin SODIMM (MO-224) Figures
Figure 1:
PDF: 09005aef80804052/Source: 09005aef806e057b
DD9C16_32_64x72H.fm - Rev. E 1/08 EN
PCB height: 31.75mm (1.25in)
(SODIMM)
512MB (64 Meg x 72)
architecture; two data accesses per clock cycle
received with data—that is, source-synchronous
data capture
operation
(128MB) and 7.8125µs (256MB, 512MB) maximum
average periodic refresh interval
compatibility
DD
DDSPD
= V
DD
= +2.3V to +3.6V
Q = +2.5V (-40B: V
Low-Profile Layout
Products and specifications discussed herein are subject to change by Micron without notice.
128MB, 256MB, 512MB (x72, ECC, SR) 200-Pin DDR SDRAM SODIMM
DD
= V
DD
1
Q = +2.6V)
www.micron.com
1
Figure 2:
PCB height: 38.10mm (1.5in)
Notes: 1. End of life.
Options
• Operating temperature
• Package
• Memory clock, speed, CAS latency
– Commercial (0°C ≤ T
– Industrial (–40°C ≤ T
– 200-pin DIMM (standard)
– 200-pin DIMM (Pb-free)
– 5.0ns (200 MHz), 400 MT/s, CL = 3.0
– 6.0ns (167 MHz), 333 MT/s, CL = 2.5
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.0
– 7.5ns (133 MHz), 266 MT/s, CL = 2.5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. Contact Micron for industrial temperature
3. Not recommended for new designs.
module offerings.
Standard Layout
A
A
2
≤ +85°C)
≤ +70°C)
©2004 Micron Technology, Inc. All rights reserved.
3
3
3
Marking
Features
None
-40B
-26A
-335
-262
-265
G
Y
I

Related parts for MT9VDDT6472HIY-335F2

MT9VDDT6472HIY-335F2 Summary of contents

Page 1

... MT9VDDT3272H – 256MB MT9VDDT6472H – 512MB For component data sheets, refer to Micron’s Web site: Features • 200-pin, small-outline dual in-line memory module (SODIMM) • Fast data transfer rates: PC2100, PC2700, or PC3200 • 128MB (16 Meg x 72), 256MB (32 Meg x 72), and 512MB (64 Meg x 72) • ...

Page 2

... RCD and RP for -335 modules show 18ns to align with industry specifications; 128MB 4K 8K (A0–A11) 4 (BA0, BA1) 128Mb (16 Meg x 8) 256Mb (32 Meg (A0–A9) 1 (S0#) 1 128Mb DDR SDRAM Module Configuration Bandwidth 16 Meg ...

Page 3

... ECC, SR) 200-Pin DDR SDRAM SODIMM Table 5: Part Numbers and Timing Parameters – 512MB Modules Base device: MT46V64M8, Module 2 Part Number Density MT9VDDT6472HG-40B__ 512MB MT9VDDT6472HY-40B__ 512MB MT9VDDT6472HG-335__ 512MB MT9VDDT6472HY-335__ 512MB MT9VDDT6472HG-26A__ 512MB MT9VDDT6472HG-265__ 512MB Notes: 1. Data sheets for the base devices can be found on Micron’s Web site. ...

Page 4

ECC, SR) 200-Pin DDR SDRAM SODIMM Pin Assignments and Descriptions Table 6: Pin Assignments 200-Pin SODIMM Front Pin Symbol Pin Symbol Pin 101 REF DQ19 103 SS 5 ...

Page 5

... Data strobe: Output with read data. Edge-aligned with read data. Input with write data. Center-aligned with write data. Used to capture data. I/O Serial presence-detect data: SDA is a bidirectional pin used to transfer addresses and data into and out of the presence-detect portion of the module. Supply Power supply: +2.5V ±0.2V (-40B: +2.6V ±0.1V). Supply Serial EEPROM positive power supply: +2 ...

Page 6

ECC, SR) 200-Pin DDR SDRAM SODIMM Functional Block Diagrams Figure 3: Functional Block Diagram – Low-Profile Layout S0# DQS0 DM0 DQS1 DM1 DQS2 DM2 DQS3 DM3 DQS8 DM8 BA0, BA1 A0–A11/A12 PDF: 09005aef80804052/Source: 09005aef806e057b DD9C16_32_64x72H.fm - ...

Page 7

ECC, SR) 200-Pin DDR SDRAM SODIMM Figure 4: Functional Block Diagram – Standard Layout S0# DQS0 DM0 DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQS1 DM1 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 DQS2 ...

Page 8

... DDR SDRAM modules incorporate serial presence-detect. The SPD function is imple- mented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes. The first 128 bytes are programmed by Micron to identify the module type and various SDRAM organizations and timing parameters. The remaining 128 bytes of storage are available for use by the customer ...

Page 9

... Electrical Specifications Stresses greater than those listed in Table 8 may cause permanent damage to the module. This is a stress rating only, and functional operation of the module at these or any other conditions outside those indicated on the device data sheet is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability ...

Page 10

ECC, SR) 200-Pin DDR SDRAM SODIMM I Specifications DD Table 10: I Specifications and Conditions – 128MB DD Values are shown for the MT46V16M8 DDR SDRAM only and are computed from values specified in the 128Mb ...

Page 11

ECC, SR) 200-Pin DDR SDRAM SODIMM Table 11: I Specifications and Conditions – 256MB DD Values are shown for the MT46V32M8 DDR SDRAM only and are computed from values specified in the 256Mb (32 Meg x ...

Page 12

ECC, SR) 200-Pin DDR SDRAM SODIMM Table 12: I Specifications and Conditions – 512MB DD Values are shown for MT46V64M8 DDR SDRAM only and are computed from values specified in the 512Mb (64 Meg x 8) ...

Page 13

ECC, SR) 200-Pin DDR SDRAM SODIMM Serial Presence-Detect Table 13: Serial Presence-Detect EEPROM DC Operating Conditions Parameter/Condition Supply voltage Input high voltage: Logic 1; All inputs Input low voltage: Logic 0; All inputs Output low voltage: ...

Page 14

... U3 U4 0.46 (0.018) 0.61 (0.024) TYP TYP Pin 1 63.60 (2.504) TYP Back view Module Dimensions U5 31.9 (1.256) 31.6 (1.244) 20.0 (0.787) TYP Pin 199 TYP Dual Rank SoDIMM 0.320 (8.13) MAX U10 0.043 (1.10) 0.035 (0.90) Pin 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ...

Page 15

Figure 6: 200-Pin SODIMM – Standard Layout U1 2.0 (0.079) R (2X) 1.8 (0.071) (2X) 6.0 (0.236) TYP 2.44 (0.096) TYP 2.0 (0.079) TYP 0.99 (0.039) U6 Pin 200 Notes: 1. All dimensions are in millimeters (inches); MAX/MIN or typical ...

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